DMTH6004SPSQ-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerDI5060-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

3.1 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

95.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

167 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Product:

MOSFETs

Series:

DMTH6004

Transistor Type:

1 N-Channel

Type:

N-Channel Enhancement Mode MOSFET

Brand:

Diodes Incorporated

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

11.7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

31 ns

Typical Turn-On Delay Time:

13.2 ns

Unit Weight:

0.003386 oz

Tags

DMTH6004S, DMTH6004, DMTH600, DMTH60, DMTH6, DMTH, DMT