PartNumber | DMTH6004LPSQ-13 | DMTH6004LPS-13 | DMTH6002LPS-13 |
Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A | MOSFET MOSFETBVDSS: 41V-60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI5060-8 | PowerDI5060-8 | PowerDI5060-8 |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Series | DMTH6004 | DMTH6004 | DMTH6002 |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.003386 oz | 0.003386 oz | 0.003422 oz |
RoHS | - | Y | Y |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Id Continuous Drain Current | - | 22 A | 100 A |
Rds On Drain Source Resistance | - | 3.1 mOhms | 1.7 mOhms |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 96.3 nC | 130.8 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 2.6 W | 167 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 32.9 ns | 19.5 ns |
Rise Time | - | 17.7 ns | 10.8 ns |
Typical Turn Off Delay Time | - | 53.5 ns | 44 ns |
Typical Turn On Delay Time | - | 9.9 ns | 11.2 ns |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |