IRF3708PBF

Mfr. #:: IRF3708PBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 30V 62A 12mOhm 24nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF3708PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF3708PBF Datasheet IRF3708PBF Datasheet (P4-P6)IRF3708PBF Datasheet (P7-P9)IRF3708PBF Datasheet (P10-P11)
ECAD Model:
More Information:: IRF3708PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 62 A

Rds On - Drain-Source Resistance:: 13.5 mOhms

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 24 nC

Pd - Power Dissipation:: 87 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001553964

Unit Weight:: 0.211644 oz

Tags: IRF3708, IRF370, IRF37, IRF3, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF3708PBF Description

***ler Electronic: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 30 V 29 mOhm 24 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop Global: Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 87 W

***ied Electronics & Automation: MOSFET, 30V, 62A, 12 MOHM, 24 NC QG, TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 30V, 62A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:87W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:62A; Junction to Case Thermal Resistance A:1.73°C/W; Package / Case:TO-220AB; Power Dissipation Pd:87W; Power Dissipation Pd:87W; Pulse Current Idm:248A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

IRF3708PBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF3708PBF DISTI # 26091123	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube	1677	1000:$0.4946 500:$0.6105 100:$0.6949 50:$0.8543
IRF3708PBF DISTI # IRF3708PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 62A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	18701In Stock	1000:$0.7570 500:$0.9589 100:$1.2365 10:$1.5650 1:$1.7700
IRF3708PBF DISTI # C1S322000480083	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2177	1000:$0.8210 500:$0.8880 100:$0.9880 50:$1.1700 25:$1.3100 5:$1.8100
IRF3708PBF DISTI # IRF3708PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3708PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 655	1:$0.9629 10:$0.8949 25:$0.8919 50:$0.8899 100:$0.7239 500:$0.6359 1000:$0.4639
IRF3708PBF DISTI # 38K2785	Infineon Technologies AG	MOSFET Transistor, N Channel, 62 A, 30 V, 12 mohm, 10 V, 2 V RoHS Compliant: Yes	16349	1:$1.5100 10:$1.2900 100:$0.9870 500:$0.8720 1000:$0.6890 2500:$0.6110 10000:$0.5880
IRF3708PBF. DISTI # 29AC7070	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:62A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:87W,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes	0	1:$1.5100 10:$1.2900 100:$0.9870 500:$0.8720 1000:$0.6890 2500:$0.6110 10000:$0.5880
IRF3708PBF DISTI # 70018201	Infineon Technologies AG	IRF3708PBF N-channel MOSFET Transistor,62 A,30 V,3-Pin TO-220AB RoHS: Compliant	0	1:$1.7440
IRF3708PBF	Infineon Technologies AG	Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	130	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000
IRF3708PBF	International Rectifier	RoHS: Not Compliant	1891	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500
IRF3708PBF DISTI # 942-IRF3708PBF	Infineon Technologies AG	MOSFET MOSFT 30V 62A 12mOhm 24nC RoHS: Compliant	1339	1:$1.5100 10:$1.2900 100:$0.9870 500:$0.8720 1000:$0.6890 2000:$0.6110 10000:$0.5880
IRF3708PBF DISTI # 5430872P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 62A TO220AB, TU	175	10:£0.7300 25:£0.6800
IRF3708PBF DISTI # 5430872	Infineon Technologies AG	MOSFET N-CHANNEL 30V 62A TO220AB, EA	403	1:£2.0000 10:£0.7300 25:£0.6800
IRF3708PBF DISTI # IRF3708PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,62A,87W,TO220AB	16	1:$1.0400 3:$0.9300 10:$0.7700 100:$0.6700
IRF3708PBF	International Rectifier	RoHS: Compliant	Europe - 250
IRF3708PBF DISTI # 8648158	Infineon Technologies AG	MOSFET, N, 30V, 62A, TO-220 RoHS: Compliant	16963	5:£0.7450 25:£0.6940 100:£0.6820 250:£0.6690 500:£0.6570
IRF3708PBF DISTI # 8648158	Infineon Technologies AG	MOSFET, N, 30V, 62A, TO-220 RoHS: Compliant	16491	1:$2.4000 10:$2.0400 100:$1.5700 500:$1.3800 1000:$1.1000 2000:$0.9680 10000:$0.9660

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Availability

Stock:: Available
On Order:: 1993
Enter Quantity:

Current price of IRF3708PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.51~~; ~~$1.51~~

10: ~~$1.29~~; ~~$12.90~~

100: ~~$0.99~~; ~~$98.70~~

500: ~~$0.87~~; ~~$436.00~~

1000: ~~$0.69~~; ~~$689.00~~

2000: ~~$0.61~~; ~~$1 222.00~~

10000: ~~$0.59~~; ~~$5 880.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF3708PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes