IRF3708

IRF3708PBF vs IRF3708 vs IRF3708L

 
PartNumberIRF3708PBFIRF3708IRF3708L
DescriptionMOSFET MOSFT 30V 62A 12mOhm 24nCMOSFET N-CH 30V 62A TO-220ABMOSFET N-CH 30V 62A TO-262
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current62 A--
Rds On Drain Source Resistance13.5 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge24 nC--
Pd Power Dissipation87 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001553964--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF3708PBF MOSFET MOSFT 30V 62A 12mOhm 24nC
Infineon Technologies
Infineon Technologies
IRF3708 MOSFET N-CH 30V 62A TO-220AB
IRF3708L MOSFET N-CH 30V 62A TO-262
IRF3708SPBF MOSFET N-CH 30V 62A D2PAK
IRF3708STRL MOSFET N-CH 30V 62A D2PAK
IRF3708STRR MOSFET N-CH 30V 62A D2PAK
IRF3708STRLPBF MOSFET N-CH 30V 62A D2PAK
IRF3708STRRPBF MOSFET N-CH 30V 62A D2PAK
IRF3708PBF MOSFET N-CH 30V 62A TO-220AB
IRF3708S MOSFET N-CH 30V 62A D2PAK
IRF3708PBF. Transistor Polarity:N Channel, Continuous Drain Current Id:62A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissip
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