FDS6673BZ-F085

FDS6673BZ-F085
Mfr. #:
FDS6673BZ-F085
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET -30V P-Channel PowerTrench
Lifecycle:
New from this manufacturer.
Datasheet:
FDS6673BZ-F085 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDS6673BZ-F085 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
14.5 A
Rds On - Drain-Source Resistance:
6.5 mOhms
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
88 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Qualification:
AEC-Q101
Tradename:
PowerTrench
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Series:
FDS6673BZ_F085
Transistor Type:
1 P-Channel
Width:
3.9 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
60 S
Fall Time:
105 ns
Product Type:
MOSFET
Rise Time:
16 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
225 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
FDS6673BZ_F085
Unit Weight:
0.008127 oz
Tags
FDS6673B, FDS6673, FDS667, FDS66, FDS6, FDS
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
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***emi
P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***et
TRANS MOSFET N-CH 30V 16A 8SOIC
***ser
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***eco
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***Yang
TRANS MOSFET N-CH 30V 16A 8SOIC - Bulk
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***ark
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
***ment14 APAC
P CHANNEL, MOSFET, -30V, -16A, SOIC; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A;
***ure Electronics
Single P-Channel 30 V 10.2 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,P CH,30V,16A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -16A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power
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Fairchild FDS8896 N-channel MOSFET Transistor, 15 A, 30 V, 8-Pin SOIC | ON Semiconductor FDS8896
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***ure Electronics
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***Yang
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube
***icontronic
Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FDS6673BZ_F085
DISTI # V36:1790_06338045
ON Semiconductor-30V P-CHANNEL POWERTRENCH&#170
    FDS6673BZ-F085
    DISTI # FDS6673BZ-F085CT-ND
    ON SemiconductorMOSFET P-CH 30V 14.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDS6673BZ-F085
      DISTI # FDS6673BZ-F085DKR-ND
      ON SemiconductorMOSFET P-CH 30V 14.5A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDS6673BZ-F085
        DISTI # FDS6673BZ-F085TR-ND
        ON SemiconductorMOSFET P-CH 30V 14.5A 8-SOIC
        RoHS: Compliant
        Container: Tape & Reel (TR)
        Temporarily Out of Stock
          FDS6673BZ-F085
          DISTI # FDS6673BZ-F085
          ON SemiconductorTrans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6673BZ-F085)
          RoHS: Compliant
          Min Qty: 2500
          Container: Reel
          Americas - 0
            FDS6673BZ-F085
            DISTI # FDS6673BZ-F085
            ON SemiconductorTrans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R - Bulk (Alt: FDS6673BZ-F085)
            RoHS: Compliant
            Min Qty: 676
            Container: Bulk
            Americas - 0
            • 6760:$0.4559
            • 3380:$0.4679
            • 2028:$0.4739
            • 1352:$0.4799
            • 676:$0.4829
            FDS6673BZ_F085
            DISTI # 64R3052
            ON SemiconductorPCH POWER TRENCH MOSFET / TAPE REEL0
            • 30000:$0.4180
            • 18000:$0.4280
            • 12000:$0.4450
            • 6000:$0.4940
            • 3000:$0.5430
            • 1:$0.5660
            FDS6673BZ-F085
            DISTI # 512-FDS6673BZ_F085
            ON SemiconductorMOSFET -30V P-Channel PowerTrench
            RoHS: Compliant
            3683
            • 1:$1.1800
            • 10:$1.0100
            • 100:$0.7790
            • 500:$0.6880
            • 1000:$0.5430
            • 2500:$0.4820
            • 10000:$0.4640
            FDS6673BZ-F085ON SemiconductorSmall Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant
            2500
            • 1000:$0.4900
            • 500:$0.5100
            • 100:$0.5300
            • 25:$0.5600
            • 1:$0.6000
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            Availability
            Stock:
            Available
            On Order:
            1986
            Enter Quantity:
            Current price of FDS6673BZ-F085 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $1.18
            $1.18
            10
            $1.01
            $10.10
            100
            $0.78
            $77.90
            500
            $0.69
            $344.00
            1000
            $0.54
            $543.00
            Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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