FGP10N60UNDF

FGP10N60UNDF
Mfr. #:
FGP10N60UNDF
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 600V 10A NPT IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
FGP10N60UNDF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGP10N60UNDF more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.3 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
10 A
Pd - Power Dissipation:
139 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
FGP10N60UNDF
Packaging:
Tube
Brand:
ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:
+/- 10 uA
Product Type:
IGBT Transistors
Factory Pack Quantity:
800
Subcategory:
IGBTs
Unit Weight:
0.063493 oz
Tags
FGP10N, FGP10, FGP1, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
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ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Part # Mfg. Description Stock Price
FGP10N60UNDF
DISTI # V36:1790_06359745
ON SemiconductorNPTPIGBT TO220 10A 600V129892
  • 1000:$0.9258
  • 500:$1.1233
  • 100:$1.2682
  • 10:$1.6082
  • 1:$2.0813
FGP10N60UNDF
DISTI # FGP10N60UNDF-ND
ON SemiconductorIGBT 600V 20A 139W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
756In Stock
  • 5600:$0.9100
  • 3200:$0.9214
  • 800:$1.1944
  • 100:$1.4537
  • 25:$1.7064
  • 10:$1.8090
  • 1:$2.0100
FGP10N60UNDF
DISTI # 32373636
ON SemiconductorNPTPIGBT TO220 10A 600V129892
  • 1000:$0.9258
  • 500:$1.1233
  • 100:$1.2682
  • 10:$1.6082
  • 8:$1.8921
FGP10N60UNDF
DISTI # 31022398
ON SemiconductorNPTPIGBT TO220 10A 600V800
  • 1000:$0.9336
  • 800:$1.1187
FGP10N60UNDF
DISTI # FGP10N60UNDF
ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: FGP10N60UNDF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.8069
  • 500:€0.8369
  • 100:€0.8689
  • 50:€0.9039
  • 25:€0.9419
  • 10:€1.0269
  • 1:€1.1299
FGP10N60UNDF
DISTI # FGP10N60UNDF
ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: FGP10N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 8000:$0.8019
  • 4800:$0.8219
  • 3200:$0.8329
  • 1600:$0.8439
  • 800:$0.8489
FGP10N60UNDF
DISTI # 46W4343
ON SemiconductorNPTPIGBT TO220 10A 600V / TUBE0
  • 10000:$0.8850
  • 2500:$0.9240
  • 1000:$1.0000
  • 500:$1.2000
  • 100:$1.3600
  • 10:$1.6800
  • 1:$2.0700
FGP10N60UNDF
DISTI # 512-FGP10N60UNDF
ON SemiconductorIGBT Transistors 600V 10A NPT IGBT
RoHS: Compliant
1192
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1300
  • 1000:$0.9430
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of FGP10N60UNDF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.62
$1.62
10
$1.38
$13.80
100
$1.10
$110.00
500
$0.97
$483.00
1000
$0.80
$800.00
2500
$0.79
$1 972.50
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