2SC5065-O(TE85L,F)

Mfr. #:: 2SC5065-O(TE85L,F)
Manufacturer:: Toshiba
Description:: Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
Lifecycle:: New from this manufacturer.
Datasheet:: 2SC5065-O(TE85L,F) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2SC5065-O(TE85L,F) Datasheet 2SC5065-O(TE85L,F) Datasheet (P4-P6)2SC5065-O(TE85L,F) Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - BJT

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SC-70-3

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 12 V

Collector- Base Voltage VCBO:: 20 V

Emitter- Base Voltage VEBO:: 3 V

Collector-Emitter Saturation Voltage:: -

Maximum DC Collector Current:: 30 mA

Gain Bandwidth Product fT:: 7 GHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 125 C

DC Current Gain hFE Max:: 240

Packaging:: Reel

Brand:: Toshiba

Continuous Collector Current:: 30 mA

DC Collector/Base Gain hfe Min:: 80

Pd - Power Dissipation:: 100 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Tags: 2SC5065-O(T, 2SC5065-O, 2SC5065, 2SC506, 2SC50, 2SC5, 2SC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC5065-O(TE85L,F) Description

***nsix Microsemi: 0.03A I(C) 1-Element Ultra High Frequency Band Silicon NPN

***i-Key: RF TRANS NPN 12V 7GHZ USM

***hard Electronics: Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V

***et: Trans GP BJT NPN 12V 0.03A 3-Pin USM T/R

***i-Key: RF TRANS NPN 12V 7GHZ USM

***el Nordic: Contact for details

***roFlash: RF Bipolar Transistors NPN wideband silicon RF transistor

***ark: Trans Gp Bjt Npn 16V 0.05A Automotive 3-Pin Sc-70 T/r Rohs Compliant: Yes

***nell: RF TRANSISTOR, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 12V 0.035A 3-Pin SC-70 T/R

*** Electronics: RF Bipolar Transistors Single NPN 12V 35mA 300mW 40 5GHz

***peria: BFR93AW - NPN 5 GHz wideband transistor

***i-Key: TRANS NPN 12V 35MA 5GHZ SOT323

***el Electronic: Voltage Regulators - Switching Regulators SWITCHING REGULATOR

***W: RF Transistor, NPN, 2 GHz, Max. Gain in dB is 18.5 @ 900 MHz, 3 pin SOT323, Silicon

***ure Electronics: BFU520W Series 12 V 30 mA 450 mW NPN Wideband Silicon RF Transistor - SOT-323-3

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin SC-70 T/R

***enic: 1nA 12V 450mW 5mA 95@5mA8V 10GHz NPN -40¡Í~+150¡Í@(Tj) SOT-323-3 Bipolar Transistors - BJT ROHS

***et: Transistor RF BJT NPN 24V 30mA 3-Pin SOT-323

***ment14 APAC: RF Transistor, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power

***nell: RF TRANSISTOR, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***roFlash: Trans Rf NPN 10V 1GHZ Ssm

***: TRANSISTOR PD=150MW F=1MHZ

Image	Part #	Description
	Mfr.#: 2SC5065-O(TE85L,F) OMO.#: OMO-2SC5065-O-TE85L-F-	Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
	Mfr.#: 2SC5065-O OMO.#: OMO-2SC5065-O-1190	New and Original
	Mfr.#: 2SC5065-O(TE85LF)CT-ND OMO.#: OMO-2SC5065-O-TE85LF-CT-ND-1190	New and Original
	Mfr.#: 2SC5065-O(TE85LF)DKR-ND OMO.#: OMO-2SC5065-O-TE85LF-DKR-ND-1190	New and Original
	Mfr.#: 2SC5065-O(TE85LF)TR-ND OMO.#: OMO-2SC5065-O-TE85LF-TR-ND-1190	New and Original

2SC5065-O(TE85L,F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes