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FDU7N60NZTU

FDU7N60NZTU
Mfr. #:
FDU7N60NZTU
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
Lifecycle:
New from this manufacturer.
Datasheet:
FDU7N60NZTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
5.5 A
Rds On - Drain-Source Resistance:
1.05 Ohms
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
90 W
Configuration:
Single
Tradename:
UniFET
Packaging:
Tube
Height:
6.3 mm
Length:
6.8 mm
Series:
FDU7N60NZTU
Transistor Type:
1 N-Channel
Width:
2.5 mm
Brand:
ON Semiconductor / Fairchild
Product Type:
MOSFET
Factory Pack Quantity:
5040
Subcategory:
MOSFETs
Unit Weight:
0.012102 oz
Tags
FDU7N60NZ, FDU7N60N, FDU7N6, FDU7N, FDU7, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmeshII plus 600V 4.5A
*** Electronic Components
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 4.5A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251
***el Electronic
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
***et Europe
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-251 Tube
***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Part # Mfg. Description Stock Price
FDU7N60NZTU
DISTI # FDU7N60NZTU-ND		ON SemiconductorMOSFET N-CH 600V SGL IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.6291
FDU7N60NZTU
DISTI # FDU7N60NZTU		ON SemiconductorMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: FDU7N60NZTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.5619
  • 10080:$0.5579
  • 20160:$0.5509
  • 30240:$0.5439
  • 50400:$0.5299
FDU7N60NZTU
DISTI # 54T8364		ON SemiconductorUF2 600V 1.25OHM IPAK / TUBE0
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8170
  • 1000:$0.7140
  • 2500:$0.5770
  • 10000:$0.5590
FDU7N60NZTUON Semiconductor 
RoHS: Not Compliant		5040
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		84030
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTU
DISTI # 512-FDU7N60NZTU		ON SemiconductorMOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
RoHS: Compliant		5000
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8180
  • 1000:$0.6450
  • 2500:$0.5720
  • 10000:$0.5510
FDU7N60NZTU
DISTI # 8070710P		ON SemiconductorMOSFETFAIRCHILDFDU7N60NZTU, TU4560
  • 50:£0.3840
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OMO.#: OMO-STFH10N60M2-STMICROELECTRONICS

 MOSFET NCH 600V 7.5A TO220
Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of FDU7N60NZTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.95
$0.95
10
$0.82
$8.17
100
$0.63
$62.70
500
$0.55
$277.00
1000
$0.44
$437.00
2500
$0.39
$970.00
10000
$0.37
$3 730.00
25000
$0.36
$9 025.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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