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FZ400R33KL2CB5NOSA1

FZ400R33KL2CB5NOSA1
Mfr. #:
FZ400R33KL2CB5NOSA1
Manufacturer:
Infineon Technologies
Description:
MOD IGBT MED PWR A-IHV73-6
Lifecycle:
New from this manufacturer.
Datasheet:
FZ400R33KL2CB5NOSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FZ400R33KL, FZ400R3, FZ400R, FZ40, FZ4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 3300V 750A 4900000mW Automotive 5-Pin IHV73-6 Tray
***S
new, original packaged
***el Electronic
MOD IGBT MED PWR A-IHV73-6
***i-Key
IGBT MOD 3300V 750A 4900W
***el Nordic
Contact for details
***ineon
3300V IHV 73mm single switch IGBT Module with IGBT2 Low Loss and 10.2kV isolation - The best solution for your traction and industry applications. | Summary of Features: High reliability and robust module construction (6.5kV housing); 10.2kV insulation | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
***ical
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
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Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
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FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray
***nell
IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 560A 1785000mW 7-Pin Case SP-6 Tube
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Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
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***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
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***el Electronic
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***ure Electronics
APTGT450x Series 600 V 550 A Trench + Field Stop IGBT Power Module - SP6
*** Stop Electro
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***ical
Trans IGBT Module N-CH 600V 550A 1750000mW 7-Pin Case SP-6 Tube
***rochip SCT
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***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
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***ure Electronics
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*** Stop Electro
Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6
***rochip SCT
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***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
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***el Electronic
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Part # Mfg. Description Stock Price
FZ400R33KL2CB5NOSA1
DISTI # FZ400R33KL2CB5NOSA1-ND		Infineon Technologies AGMOD IGBT MED PWR A-IHV73-6
RoHS: Not compliant
Min Qty: 4
Container: Tray		Temporarily Out of Stock
  • 4:$1,424.4225
FZ400R33KL2CB5NOSA1
DISTI # FZ400R33KL2CB5NOSA1		Infineon Technologies AGTRACTION - Trays (Alt: FZ400R33KL2CB5NOSA1)
RoHS: Not Compliant
Min Qty: 4
Container: Tray		Americas - 0
  • 40:$1,351.0000
  • 24:$1,384.0000
  • 16:$1,419.0000
  • 8:$1,456.0000
  • 4:$1,475.0000
FZ400R33KL2C_B5
DISTI # 641-FZ400R33KL2C_B5		Infineon Technologies AGIGBT Modules N-CH 3.3KV 750A6
  • 1:$1,401.9900
Image Part # Description
FZ400R33KL2C_B5

Mfr.#: FZ400R33KL2C_B5

OMO.#: OMO-FZ400R33KL2C-B5

 IGBT Modules N-CH 3.3KV 750A
FZ400R33KL2C_B5

Mfr.#: FZ400R33KL2C_B5

OMO.#: OMO-FZ400R33KL2C-B5-125

 IGBT Modules N-CH 3.3KV 750A
FZ400R33KF1

Mfr.#: FZ400R33KF1

OMO.#: OMO-FZ400R33KF1-1190

 New and Original
FZ400R33KF2

Mfr.#: FZ400R33KF2

OMO.#: OMO-FZ400R33KF2-1190

 New and Original
FZ400R33KF2_B5

Mfr.#: FZ400R33KF2_B5

OMO.#: OMO-FZ400R33KF2-B5-1190

 New and Original
FZ400R33KL2C

Mfr.#: FZ400R33KL2C

OMO.#: OMO-FZ400R33KL2C-1190

 New and Original
FZ400R33KL2CB5NOSA1

Mfr.#: FZ400R33KL2CB5NOSA1

OMO.#: OMO-FZ400R33KL2CB5NOSA1-INFINEON-TECHNOLOGIES

 MOD IGBT MED PWR A-IHV73-6
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of FZ400R33KL2CB5NOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.00
$2.00
10
$2.00
$20.00
100
$1.00
$100.00
500
$1.00
$500.00
1000
$1.00
$1 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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