RQ5A030APTL

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-346-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

3 A

Rds On - Drain-Source Resistance:

180 mOhms

Vgs th - Gate-Source Threshold Voltage:

300 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

16 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

0.95 mm

Length:

3 mm

Product:

MOSFET

Transistor Type:

1 P-Channel

Type:

Power MOSFET

Width:

1.8 mm

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

3.5 S

Fall Time:

60 ns

Product Type:

MOSFET

Rise Time:

40 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

160 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

RQ5A030AP

Unit Weight:

0.000423 oz

Tags

RQ5A03, RQ5A, RQ5