NGTG35N65FL2WG

Mfr. #:: NGTG35N65FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 650V/35A FAST IGBT FSII T
Lifecycle:: New from this manufacturer.
Datasheet:: NGTG35N65FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTG35N65FL2WG Datasheet NGTG35N65FL2WG Datasheet (P4-P6)NGTG35N65FL2WG Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 2.2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 70 A

Pd - Power Dissipation:: 300 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 35 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 1.340411 oz

Tags: NGTG3, NGTG, NGT

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

NGTG35N65FL2WG Description

***ical: Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, TO-247

***nell: IGBT, SINGLE, 650V, 70A, TO-247-3;

*** Electronics: ON SEMICONDUCTOR NGTG35N65FL2WG IGBT Single Transistor, UPS & Solar Application, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 Pins

***i-Key: IGBT FIELD STOP 650V 70A TO247-3

***ical: Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.7pF 25volts C0G +/-0.5pF

***nell: IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 250 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***roFlash: Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 74A 250000mW Automotive 3-Pin(3+Tab) TO-247 Tube

*** Source Electronics: 650V DuoPack IGBT and Diode High speed switching series fifth generation

***ineon SCT: 650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***nell: IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

***trelec: Configuration = Single / Continuous Collector Current (Ic) A = 40 / Collector-Emitter Voltage (Vceo) V = 650 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.65 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 250 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

Market price

Part #	Mfg.	Description	Stock	Price
NGTG35N65FL2WG DISTI # V99:2348_07277400	ON Semiconductor	IGBT - FIELD STOP II RoHS: Compliant	28	2500:$1.7870 1000:$1.8180 500:$2.0210 250:$2.0720 100:$2.1290 10:$2.3929 1:$2.6200
NGTG35N65FL2WG DISTI # V36:1790_07277400	ON Semiconductor	IGBT - FIELD STOP II RoHS: Compliant	0
NGTG35N65FL2WG DISTI # NGTG35N65FL2WGOS-ND	ON Semiconductor	IGBT 650V 60A 167W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	120In Stock	1020:$2.1560 510:$2.5564 120:$3.1570 30:$3.4650 1:$4.3100
NGTG35N65FL2WG DISTI # 32039124	ON Semiconductor	IGBT - FIELD STOP II RoHS: Compliant	2160	240:$1.7766
NGTG35N65FL2WG DISTI # 30603856	ON Semiconductor	IGBT - FIELD STOP II RoHS: Compliant	30	30:$1.7850
NGTG35N65FL2WG DISTI # 25862558	ON Semiconductor	IGBT - FIELD STOP II RoHS: Compliant	28	2500:$1.9210 1000:$1.9544 500:$2.1726 250:$2.2274 100:$2.2887 10:$2.5724 4:$2.8165
NGTG35N65FL2WG DISTI # NGTG35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube (Alt: NGTG35N65FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€3.7200 10:€2.8100 100:€2.4500 250:€2.3200 500:€2.0800 1000:€1.6700
NGTG35N65FL2WG DISTI # NGTG35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTG35N65FL2WG) Min Qty: 161 Container: Bulk	Americas - 0	161:$1.9900 163:$1.9900 324:$1.9900 805:$1.8900 1610:$1.8900
NGTG35N65FL2WG DISTI # NGTG35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG35N65FL2WG) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$1.8301 300:$1.8182 540:$1.7949 1200:$1.7721 2400:$1.7284
NGTG35N65FL2WG DISTI # NGTG35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube (Alt: NGTG35N65FL2WG) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0	240:$2.8000 480:$2.6923 720:$2.5926 1200:$2.5000 2400:$2.4138 6000:$2.3333 12000:$2.2951
NGTG35N65FL2WG DISTI # 75Y1871	ON Semiconductor	IGBT Single Transistor, UPS & Solar Application, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 RoHS Compliant: Yes	69	10:$3.3600 1:$3.9400
NGTG35N65FL2WG. DISTI # 29AC8933	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	10:$3.3600 1:$3.9400
NGTG35N65FL2WG DISTI # 863-NGTG35N65FL2WG	ON Semiconductor	IGBT Transistors 650V/35A FAST IGBT FSII T RoHS: Compliant	230	1:$3.7100 10:$3.1500 100:$2.7400 250:$2.6000 500:$2.3300
NGTG35N65FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	22950	1000:$2.0500 500:$2.1600 100:$2.2500 25:$2.3500 1:$2.5300
NGTG35N65FL2WG DISTI # 9008817P	ON Semiconductor	IGBT FIELD STOP II 650V 35A TO247-3, TU	65	500:£1.9780 250:£2.0720 100:£2.2160 25:£2.3780
NGTG35N65FL2WG	ON Semiconductor	650V,35A,IGBT	20	1:$3.4300 100:$2.5700 500:$2.2000 1000:$2.0600
NGTG35N65FL2WG DISTI # 2508344	ON Semiconductor	IGBT, SINGLE, 650V, 70A, TO-247-3 RoHS: Compliant	69	500:£1.5900 250:£1.7800 100:£1.8800 10:£2.1600 1:£2.8600
NGTG35N65FL2WG DISTI # 2508344	ON Semiconductor	IGBT, SINGLE, 650V, 70A, TO-247-3 RoHS: Compliant	69	500:$3.5100 250:$3.9200 100:$4.1300 10:$4.7500 1:$5.5900

Image	Part #	Description
	Mfr.#: DRV10974PWPR OMO.#: OMO-DRV10974PWPR	Motor / Motion / Ignition Controllers & Drivers DRV10974PWPR
	Mfr.#: LB11620T-TLM-E OMO.#: OMO-LB11620T-TLM-E	Motor / Motion / Ignition Controllers & Drivers 3PH PRE SENSOR OPEN ; THR
	Mfr.#: DRV10974PWPR OMO.#: OMO-DRV10974PWPR-TEXAS-INSTRUMENTS	IC MTR DRV MULTI 4.4-18V 16HSSOP
	Mfr.#: LB11620T-TLM-E OMO.#: OMO-LB11620T-TLM-E-ON-SEMICONDUCTOR	Motor / Motion / Ignition Controllers & Drivers 3PHASE MOTOR PRE-DRIVER

NGTG35N65FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes