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NGTG35N65FL2WG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
September, 2016 − Rev. 1
1 Publication Order Number:
NGTG35N65FL2W/D
NGTG35N65FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
650 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
70
35
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
120 A
Short−circuit withstand time
V
GE
= 15 V, V
CE
= 400 V,
T
J
≤ +150°C
t
SC
5
ms
Gate−emitter voltage
V
GE
$20
V
V
Transient gate−emitter voltage
(T
PULSE
= 5 ms, D < 0.10)
$30
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
300
150
W
Operating junction temperature range T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340L
STYLE 4
C
G
35 A, 650 V
V
CEsat
= 1.70 V
E
OFF
= 0.28 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTG35N65FL2WG TO−247
(Pb−Free)
30 Units / Rail
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
G35N65FL2
AYWWG
G
E
C
NGTG35N65FL2WG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.50 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
650 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 35 A
V
GE
= 15 V, I
C
= 35 A, T
J
= 175°C
V
CEsat
1.50
−
1.70
2.20
2.00
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 350 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 650 V
V
GE
= 0 V, V
CE
= 650 V, T
J
=
175°C
I
CES
−
−
−
−
0.5
4.0
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 200 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 3115 −
pF
Output capacitance C
oes
− 149 −
Reverse transfer capacitance C
res
− 88 −
Gate charge total
V
CE
= 480 V, I
C
= 35 A, V
GE
= 15 V
Q
g
− 125 −
nC
Gate to emitter charge Q
ge
− 30 −
Gate to collector charge Q
gc
− 63 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 35 A
R
g
= 10 W
V
GE
= 0 V/ 15 V*
t
d(on)
− 72 −
ns
Rise time t
r
− 40 −
Turn−off delay time t
d(off)
− 132 −
Fall time t
f
− 75 −
Turn−on switching loss E
on
− 0.84 −
mJ
Turn−off switching loss E
off
− 0.28 −
Total switching loss E
ts
− 1.12 −
Turn−on delay time
T
J
= 150°C
V
CC
= 400 V, I
C
= 35 A
R
g
= 10 W
V
GE
= 0 V/ 15 V*
t
d(on)
− 70 −
ns
Rise time t
r
− 38 −
Turn−off delay time t
d(off)
− 135 −
Fall time t
f
− 96 −
Turn−on switching loss E
on
− 1.05 −
mJ
Turn−off switching loss E
off
− 0.50 −
Total switching loss E
ts
− 1.55 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTG35N65FL2WG.
NGTG35N65FL2WG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
543210
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
1480
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 15 V
T
J
= 25°C
10 V
9 V
8 V
7 V
543210
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 17 V
T
J
= 150°C
10 V
9 V
8 V
7 V
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to
15 V
T
J
= −55°C
10 V
9 V
8 V
T
J
= 25°C
T
J
= 150°C
11 V
11 V
7 V
876
11 V
678
543210876
140
120
100
80
60
40
20
0
2
6410121816
Figure 5. V
CE(sat)
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
3.75
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
75500−25−50−75 200175100
I
C
= 70 A
I
C
= 35 A
I
C
= 15 A
25 125 150
Figure 6. Typical Capacitance
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1007050100
10
100
1000
10,000
C, CAPACITANCE (pF)
C
ies
C
oes
C
res
20 30 40 60 9080
T
J
= 25°C
13 V
13 V
140
140
120
100
80
60
40
20
0
15 V
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
13 V
I
C
= 5 A
3.50
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
P1-P3P4-P6P7-P7

NGTG35N65FL2WG

Mfr. #:
Buy NGTG35N65FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 650V/35A FAST IGBT FSII T
Lifecycle:
New from this manufacturer.
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