SI4800BDY-T1-GE3

Mfr. #:: SI4800BDY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 30V 6.5A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4800BDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI4800BDY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Packaging: Reel

Part-Aliases: SI4800BDY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: SOIC-Narrow-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 1.3 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 12 ns

Rise-Time: 12 ns

Vgs-Gate-Source-Voltage: 25 V

Id-Continuous-Drain-Current: 6.5 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 18.5 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 32 ns

Typical-Turn-On-Delay-Time: 7 ns

Qg-Gate-Charge: 13 nC

Channel-Mode: Enhancement

Tags: SI4800BDY-T1, SI4800BDY-T, SI4800BDY, SI4800BD, SI4800B, SI4800, SI480, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4800BDY-T1-GE3 Description

***p One Stop Global: Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R

***ure Electronics: N-CH REDUCED QG, FAST SWITCHING MOSF

***ment14 APAC: N CHANNEL MOSFET, 30V, 9A, SOIC; Transis; N CHANNEL MOSFET, 30V, 9A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:25V; Threshold Voltage Vgs Typ:25V

SI4800BDY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4800BDY-T1-GE3 DISTI # V72:2272_09216570	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant	2492	1000:$0.3323 500:$0.4074 250:$0.4273 100:$0.4748 25:$0.5960 10:$0.5985 1:$0.6943
SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4727In Stock	1000:$0.3484 500:$0.4355 100:$0.5880 10:$0.7620 1:$0.8700
SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4727In Stock	1000:$0.3484 500:$0.4355 100:$0.5880 10:$0.7620 1:$0.8700
SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3066
SI4800BDY-T1-GE3 DISTI # 25790146	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant	2492	1000:$0.3323 500:$0.4074 250:$0.4273 100:$0.4748 25:$0.5960 20:$0.5985
SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3219 5000:$0.3129 10000:$0.2999 15000:$0.2919 25000:$0.2839
SI4800BDY-T1-GE3 DISTI # SI4800BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3619 5000:€0.2469 10000:€0.2129 15000:€0.1959 25000:€0.1829
SI4800BDY-T1-GE3 DISTI # 16P3753	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 9A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$0.8800 10:$0.7210 25:$0.6650 50:$0.6090 100:$0.5530 250:$0.5150 500:$0.4760
SI4800BDY-T1-GE3. DISTI # 16AC0256	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):30mohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:25V,Power Dissipation Pd:1.3W,No. of Pins:8Pins , RoHS Compliant: No	0	1:$0.3220 5000:$0.3130 10000:$0.3000 15000:$0.2920 25000:$0.2840
SI4800BDY-T1-GE3 DISTI # 781-SI4800BDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant	154	1:$0.8800 10:$0.7210 100:$0.5530 500:$0.4760 1000:$0.3750 2500:$0.3500
SI4800BDYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2500
SI4800BDY-T1-GE3 DISTI # C1S803603715371	Vishay Intertechnologies	Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant	2492	250:$0.4273 100:$0.4748 25:$0.5960 10:$0.5985

Related products

Image	Part #	Description
	Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3	MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
	Mfr.#: SI4800BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4800BDY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4800BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI4800BDY-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4800BDY-T OMO.#: OMO-SI4800BDY-T-1190	New and Original
	Mfr.#: SI4800BDY-T1 OMO.#: OMO-SI4800BDY-T1-1190	New and Original
	Mfr.#: SI4800BDY-T1-E OMO.#: OMO-SI4800BDY-T1-E-1190	New and Original
	Mfr.#: SI4800BDY-T1-E3 OMO.#: OMO-SI4800BDY-T1-E3-VISHAY	MOSFET N-CH 30V 6.5A 8-SOIC
	Mfr.#: SI4800BDY-T1-E3 SOP8 OMO.#: OMO-SI4800BDY-T1-E3-SOP8-1190	New and Original
	Mfr.#: SI4800BDY-T1-E3. OMO.#: OMO-SI4800BDY-T1-E3--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:6.5A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0155ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Di
	Mfr.#: SI4800BDY-T1-GE3 OMO.#: OMO-SI4800BDY-T1-GE3-VISHAY	MOSFET N-CH 30V 6.5A 8-SOIC

Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of SI4800BDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.31~~; ~~$0.31~~

10: ~~$0.30~~; ~~$2.96~~

100: ~~$0.28~~; ~~$28.06~~

500: ~~$0.26~~; ~~$132.50~~

1000: ~~$0.25~~; ~~$249.40~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI4800BDY-T1 8
SI4800BDY-T 10
SI4800BDY 11
SI4800BD 12
SI4800B 14
SI4800 27
SI480 58
SI48 447
SI4 2994

SI4800BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes