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RGT40NS65DGC9

RGT40NS65DGC9
Mfr. #:
RGT40NS65DGC9
Manufacturer:
Rohm Semiconductor
Description:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Lifecycle:
New from this manufacturer.
Datasheet:
RGT40NS65DGC9 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
RGT40NS65DGC9 more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-262-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
40 A
Pd - Power Dissipation:
161 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Packaging:
Tube
Brand:
ROHM Semiconductor
Gate-Emitter Leakage Current:
200 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
50
Subcategory:
IGBTs
Part # Aliases:
RGT40NS65D(TO-262)
Tags
RGT40N, RGT4, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
***ical
Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 40A 161000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 40A, 175Deg C, 161W; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, 175DEG C, 161W; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 40A, 175°C, 161W; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:161W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Part # Mfg. Description Stock Price
RGT40NS65DGC9
DISTI # RGT40NS65DGC9-ND		ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 3000:$1.3734
  • 1000:$1.4224
  • 100:$2.0895
  • 25:$2.4524
  • 10:$2.6000
  • 1:$2.8900
RGT40NS65DGC9
DISTI # 755-RGT40NS65DGC9		ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant		1000
  • 1:$2.8800
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
RGT40NS65DGC9ROHM Semiconductor 40
  • 33:$2.1600
  • 10:$2.3760
  • 1:$3.2400
RGT40NS65DGC9ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant		Americas -
    RGT40NS65DGC9ROHM SemiconductorRoHS(ship within 1day)50
    • 1:$3.0000
    • 10:$2.2500
    • 50:$1.5000
    • 100:$1.2000
    • 500:$1.1200
    • 1000:$1.0800
    RGT40NS65DGC9
    DISTI # 3132324    		ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W
    RoHS: Compliant    		0
    • 1000:$1.8000
    • 500:$2.1100
    • 250:$2.2700
    • 100:$2.3900
    • 10:$2.7900
    • 1:$3.6800
    RGT40NS65DGC9
    DISTI # 3132324    		ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W0
    • 500:£1.2100
    • 250:£1.3000
    • 100:£1.3700
    • 10:£1.6000
    • 1:£2.1100
    Image Part # Description
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9

    		 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL

    		 IGBT Transistors 650V 20A IGBT Stop Trench
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL

    		 IGBT Transistors FIELD STOP TRENCH IGBT
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL-ROHM-SEMI

    		 IGBT Transistors 650V 20A Field Stop Trench IGBT
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL-1190

    		 FIELD STOP TRENCH IGBT
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9-1190

    		 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of RGT40NS65DGC9 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.88
    $2.88
    10
    $2.45
    $24.50
    100
    $1.96
    $196.00
    500
    $1.71
    $855.00
    1000
    $1.42
    $1 420.00
    2500
    $1.32
    $3 300.00
    5000
    $1.27
    $6 350.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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