TSM4N60ECH C5G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

2 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

12 nC

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

86.2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

21 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

3750

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

47 ns

Typical Turn-On Delay Time:

18 ns

Unit Weight:

0.011993 oz

Tags

TSM4N6, TSM4N, TSM4, TSM