OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXTP2N80P

IXTP2N80P
Mfr. #:
IXTP2N80P
Manufacturer:
IXYS
Description:
MOSFET 2 Amps 800V 6 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXTP2N80P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
Transistors - FETs, MOSFETs - Single
Series
IXTP2N80
Packaging
Tube
Unit-Weight
0.081130 oz
Mounting-Style
Through Hole
Package-Case
TO-220-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
70 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
28 ns
Rise-Time
35 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
2 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Resistance
6 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
53 ns
Typical-Turn-On-Delay-Time
25 ns
Channel-Mode
Enhancement
Tags
IXTP2N, IXTP2, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 800V 2A TO-220
***S
new, original packaged
***el Nordic
Contact for details
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220 Zener-Protected SuperMESH™ Power MOSFET
***ical
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***akorn
MOSFET N-CH 600V 2.4A TO-220
***ser
MOSFETs & MOSFETs RF .
***el Nordic
Contact for details
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube
***enic
900V 2.1A 70W 6.5´Î@10V1.05A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 6.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220
*** Source Electronics
Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220
***ure Electronics
N-Channel 900 V 4.2 O 22 nC Flange Mount QFET Mosfet - TO-220AB
***ment14 APAC
MOSFET, N-CH, 900V, 4A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Source Voltage Vds:900V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:4.2A; Max Voltage Vds:900V; On State Resistance:3.3ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:140W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220; No. of Pins:3; SVHC:Cobalt dichloride; Case Style:TO-220; Cont Current Id:4.2A; Device Marking:FQP4N90; Max On State Resistance:3.3ohm; Max Voltage Vgs th:5V; Power Dissipation Pd:140W; Pulse Current Idm:16.8A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:900V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
***th Star Micro
Transistor MOSFET N-CH 600V 2.4A 3-Pin (3+Tab) TO-220 Tube
***icroelectronics
N-CHANNEL 600V - 3.3 Ohm - 2.4A TO-220 Zener-Protected SuperMESH™ PowerMOSFET
***ure Electronics
N-Channel 600 V 3.6 Ohm Flange Mount SuperMESH Power MosFet - TO-220
***va Crawler
N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***i-Key
MOSFET N-CH 900V 3.6A TO-220
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.25ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd
***ark
MOSFET, N, TO-220; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:4.25R; Case style:TO-220 (SOT-78B); Case style, alternate:SOT-78B; Current, Idm pulse:14.4A; Pins, No. of:3; Power dissipation:130W; Power, Pd:130W; RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IXTP2N80P
DISTI # IXTP2N80P-ND		IXYS CorporationMOSFET N-CH 800V 2A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
  • 50:$1.0780
IXTP2N80P
DISTI # 747-IXTP2N80P		IXYS CorporationMOSFET 2 Amps 800V 6 Rds
RoHS: Compliant		0
    Image Part # Description
    IXTP170N13X4

    Mfr.#: IXTP170N13X4

    OMO.#: OMO-IXTP170N13X4

    		 MOSFET 135V/170A Ultra Junction X4-Class Power MOSFET, TO-220
    IXTP4N65X2

    Mfr.#: IXTP4N65X2

    OMO.#: OMO-IXTP4N65X2

    		 MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
    IXTP2N65X2

    Mfr.#: IXTP2N65X2

    OMO.#: OMO-IXTP2N65X2

    		 MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
    IXTP110N055P

    Mfr.#: IXTP110N055P

    OMO.#: OMO-IXTP110N055P-IXYS-CORPORATION

    		 MOSFET N-CH 55V 110A TO-220
    IXTP50N30TM-A

    Mfr.#: IXTP50N30TM-A

    OMO.#: OMO-IXTP50N30TM-A-1190

    		 New and Original
    IXTP4N65X2

    Mfr.#: IXTP4N65X2

    OMO.#: OMO-IXTP4N65X2-IXYS-CORPORATION

    		 MOSFET N-CH 650V 4A X2 TO-220
    IXTP80N075L2

    Mfr.#: IXTP80N075L2

    OMO.#: OMO-IXTP80N075L2-IXYS-CORPORATION

    		 MOSFET N-CH 75V 80A TO-220
    IXTP1R6N100D2

    Mfr.#: IXTP1R6N100D2

    OMO.#: OMO-IXTP1R6N100D2-IXYS-CORPORATION

    		 IGBT Transistors MOSFET N-CH MOSFETS (D2) 1000V 1.6A
    IXTP3N60P

    Mfr.#: IXTP3N60P

    OMO.#: OMO-IXTP3N60P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET 3 Amps 600V
    IXTP4N60P

    Mfr.#: IXTP4N60P

    OMO.#: OMO-IXTP4N60P-IXYS-CORPORATION

    		 MOSFET 4.0 Amps 600 V 1.9 Ohm Rds
    Availability
    Stock:
    Available
    On Order:
    3500
    Enter Quantity:
    Current price of IXTP2N80P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.62
    $1.62
    10
    $1.54
    $15.36
    100
    $1.46
    $145.53
    500
    $1.37
    $687.25
    1000
    $1.29
    $1 293.60
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Newest Products
    • MAX14920/21 AFEs
      MAX14920/21 AFEs
      Maxim's MAX14920/21 high accuracy 12-/16-cell measurement AFEs feature integrated diagnostics, low power, and high flexibility.
    • Cortex®-M Prototyping System+
      Cortex®-M Prototyping System+
      The Cortex®-M prototyping platform from ARM® evaluates and prototypes the Cortex-M family and is part of the ARM Versatile™ Express range of development boards.
    • Rack-Mount Power Distribution Units
      Rack-Mount Power Distribution Units
      Delta, the leading global provider of power and thermal management solutions, has introduced a line of horizontal and vertical mounted power distribution units.
    • Compare IXTP2N80P
      Compare IXTP2N80P
      IXTP2N100 vs IXTP2N100A vs IXTP2N100P
    • ISODAMP™ C-1000 Series Elastomers
      ISODAMP™ C-1000 Series Elastomers
      Aearo Technologies' ISODAMP™ C-1000 series elastomers ensure low amplifications at resonance and rapid settling to equilibrium after shock or vibration input.
    • TMC2041 Dual-Axis Stepper Motor Driver
      TMC2041 Dual-Axis Stepper Motor Driver
      TRINAMIC's TMC2041 dual-axis stepper motor driver IC with integrated MOSFET power switches delivers 1.5 A (peak) at 26 V supply voltage per motor.
    More Newest Products
    Top