IPD60R600P6ATMA1

Mfr. #:: IPD60R600P6ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 600V 7.3A TO252
Lifecycle:: New from this manufacturer.
Datasheet:: IPD60R600P6ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPD60R600P6ATMA1 more Information

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Tags: IPD60R600P, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD

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IPD60R600P6ATMA1 Description

***ure Electronics: Single N-Channel 650 V 10.60 Ohm 12 nC CoolMOS Power Mosfet - DPAK

***ical: Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-252

***et Europe: Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R

***Components: MOSFET N-Channel 600V 7.3A CoolMOS TO252

***ark: MOSFET, N-CH, 600V, 7.3A, TO-252-3

*** Source Electronics: MOSFET N-CH 600V 7.3A TO252

***ronik: N-CH 650V 18A 600mOhm TO252

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 7.3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 600V, 7.3A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7.3A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:63W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

IPD60R600P6ATMA1 More Information

Infineon SMPS - Low Power Topology: Infineon Technologies SMPS Low Power Topology is used for low power applications from 100W down to under 1W, wherethe output needs to be isolated from the input. Its best initialattraction is the low system cost, simplicity and ease ofimplementation. The DCM (Discontinuous Conduction Mode) Fly Back topology is the popular operating mode for low current output and power levels below 50W. The low power QR (Quasi-Resonant) Fly Back topology is largely used in low power SMPS applications such as charger, adapter and auxiliary supply.Learn More

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPD60R600P6ATMA1 DISTI # V72:2272_06384618	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1174	1000:$0.5778 500:$0.7381 250:$0.9009 100:$0.9102 25:$1.1753 10:$1.1871 1:$1.4769
IPD60R600P6ATMA1 DISTI # V36:1790_06384618	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD60R600P6ATMA1 DISTI # IPD60R600P6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1052In Stock	1000:$0.6163 500:$0.7806 100:$0.9450 10:$1.2120 1:$1.3600
IPD60R600P6ATMA1 DISTI # IPD60R600P6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1052In Stock	1000:$0.6163 500:$0.7806 100:$0.9450 10:$1.2120 1:$1.3600
IPD60R600P6ATMA1 DISTI # IPD60R600P6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.5106 5000:$0.5305 2500:$0.5585
IPD60R600P6ATMA1 DISTI # 22620556	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.4758
IPD60R600P6ATMA1 DISTI # 27179197	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1174	1000:$0.5778 500:$0.7381 250:$0.9009 100:$0.9102 25:$1.1753 14:$1.1871
IPD60R600P6ATMA1 DISTI # IPD60R600P6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.3A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD60R600P6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4819 15000:$0.4909 10000:$0.5079 5000:$0.5269 2500:$0.5469
IPD60R600P6ATMA1 DISTI # SP001178242	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.3A 3-Pin DPAK T/R (Alt: SP001178242) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.4509 15000:€0.4859 10000:€0.5269 5000:€0.5749 2500:€0.7019
IPD60R600P6ATMA1 DISTI # 726-IPD60R600P6ATMA1	Infineon Technologies AG	MOSFET LOW POWER_LEGACY RoHS: Compliant	0	1:$1.2400 10:$1.0600 100:$0.8170 500:$0.7220 1000:$0.5700

Related products

Image	Part #	Description
	Mfr.#: IPD60R600E6ATMA1 OMO.#: OMO-IPD60R600E6ATMA1	MOSFET
	Mfr.#: IPD60R600P7SAUMA1 OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 6A TO252-3
	Mfr.#: IPD60R600P7ATMA1-CUT TAPE OMO.#: OMO-IPD60R600P7ATMA1-CUT-TAPE-1190	New and Original
	Mfr.#: IPD60R600P7SE8228AUMA1 OMO.#: OMO-IPD60R600P7SE8228AUMA1-INFINEON-TECHNOLOGIES	Transistor MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600P7SE8228AUMA1)
	Mfr.#: IPD60R600C6 OMO.#: OMO-IPD60R600C6-1190	Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: IPD60R600C6)
	Mfr.#: IPD60R600C6 (6R600C6) OMO.#: OMO-IPD60R600C6-6R600C6--1190	New and Original
	Mfr.#: IPD60R600CPATMA1 OMO.#: OMO-IPD60R600CPATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 6.1A TO-252
	Mfr.#: IPD60R600CPBTMA1 OMO.#: OMO-IPD60R600CPBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 6.1A TO-252
	Mfr.#: IPD60R600E6 OMO.#: OMO-IPD60R600E6-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 7.3A TO252
	Mfr.#: IPD60R600P6 OMO.#: OMO-IPD60R600P6-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 7.3A TO252

Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of IPD60R600P6ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.72~~; ~~$0.72~~

10: ~~$0.69~~; ~~$6.87~~

100: ~~$0.65~~; ~~$65.06~~

500: ~~$0.61~~; ~~$307.20~~

1000: ~~$0.58~~; ~~$578.30~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPD60R600P6ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes