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IPB50CN10N G

IPB50CN10N G
Mfr. #:
IPB50CN10N G
Manufacturer:
Infineon Technologies AG
Description:
IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPB50CN10N G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IPB50CN10NG, IPB50C, IPB50, IPB5, IPB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CHANNEL, 100V, 20A, TO-263
***el Electronic
Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***nell
MOSFET, N CH, 20A, 100V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 44W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 20A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
Part # Mfg. Description Stock Price
IPB50CN10NGATMA1
DISTI # IPB50CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 20A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB50CN10NGATMA1
    DISTI # IPB50CN10NGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R - Bulk (Alt: IPB50CN10NGATMA1)
    Min Qty: 642
    Container: Bulk    		Americas - 0
    • 6420:$0.4949
    • 3210:$0.5039
    • 1926:$0.5219
    • 1284:$0.5409
    • 642:$0.5609
    IPB50CN10NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant    		7000
    • 1000:$0.5100
    • 500:$0.5400
    • 100:$0.5600
    • 25:$0.5900
    • 1:$0.6300
    Image Part # Description
    IPB50CN10N

    Mfr.#: IPB50CN10N

    OMO.#: OMO-IPB50CN10N-1190

    		 New and Original
    IPB50CN10NG

    Mfr.#: IPB50CN10NG

    OMO.#: OMO-IPB50CN10NG-1190

    		 New and Original
    IPB50CN10NGATMA1

    Mfr.#: IPB50CN10NGATMA1

    OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 20A TO263-3
    IPB50CN10N G

    Mfr.#: IPB50CN10N G

    OMO.#: OMO-IPB50CN10N-G-126

    		 IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of IPB50CN10N G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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