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IXXN110N65B4H1

IXXN110N65B4H1
Mfr. #:
IXXN110N65B4H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
Lifecycle:
New from this manufacturer.
Datasheet:
IXXN110N65B4H1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXN110N65B4H1 DatasheetIXXN110N65B4H1 Datasheet (P4-P6)IXXN110N65B4H1 Datasheet (P7)
ECAD Model:
More Information:
IXXN110N65B4H1 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
SOT-227
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
2.1 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
215 A
Pd - Power Dissipation:
750 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
IXXN110N65
Packaging:
Tube
Continuous Collector Current Ic Max:
110 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
10
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
1.058219 oz
Tags
IXXN1, IXXN, IXX
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Part # Mfg. Description Stock Price
IXXN110N65B4H1
DISTI # IXXN110N65B4H1-ND		IXYS CorporationIGBT 650V 215A 750W SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		367In Stock
  • 250:$17.3260
  • 100:$18.8794
  • 30:$20.3133
  • 10:$22.1060
  • 1:$23.9000
IXXN110N65B4H1
DISTI # 747-IXXN110N65B4H1		IXYS CorporationIGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
RoHS: Compliant		24
  • 1:$22.7600
  • 5:$21.6200
  • 10:$21.0600
  • 25:$19.3500
  • 50:$18.8800
  • 100:$17.9800
  • 200:$16.5000
  • 500:$15.7100
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Availability
Stock:
74
On Order:
2057
Enter Quantity:
Current price of IXXN110N65B4H1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$22.76
$22.76
5
$21.62
$108.10
10
$21.06
$210.60
25
$19.35
$483.75
50
$18.88
$944.00
100
$17.98
$1 798.00
200
$16.50
$3 300.00
500
$15.71
$7 855.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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