PartNumber | IXXN110N65C4H1 | IXXN100N60B3H1 | IXXN110N65B4H1 |
Description | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | IGBT Transistors XPT 600V IGBT GenX3 w/Diode | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | - | - |
Configuration | Single Dual Emitter | - | Single |
Collector Emitter Voltage VCEO Max | 650 V | - | 650 V |
Collector Emitter Saturation Voltage | 1.98 V | - | 2.1 V |
Continuous Collector Current at 25 C | 210 A | - | 215 A |
Gate Emitter Leakage Current | 100 nA | - | 100 nA |
Pd Power Dissipation | 750 W | - | 750 W |
Package / Case | SOT-227B-4 | - | SOT-227 |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Packaging | Tube | Tube | Tube |
Series | IXXN110N65 | Planar | IXXN110N65 |
Brand | IXYS | IXYS | IXYS |
Mounting Style | SMD/SMT | - | SMD/SMT |
Maximum Gate Emitter Voltage | 20 V | - | 30 V |
Product Type | IGBT Modules | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | XPT | XPT, GenX3 | XPT |
Unit Weight | 1.058219 oz | 1 oz | 1.058219 oz |
Technology | - | Si | Si |
Continuous Collector Current Ic Max | - | - | 110 A |