CGHV27030S

CGHV27030S
Mfr. #:
CGHV27030S
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV27030S Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV27030S more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
21 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V, 2 V
Id - Continuous Drain Current:
3.6 A
Output Power:
30 W
Maximum Drain Gate Voltage:
50 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
12 W
Mounting Style:
SMD/SMT
Package / Case:
DFN-12
Packaging:
Reel
Application:
Telecom
Configuration:
Single
Operating Frequency:
2.7 GHz
Operating Temperature Range:
- 40 C to + 150 C
Brand:
Wolfspeed / Cree
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGHV2703, CGHV270, CGHV27, CGHV2, CGHV, CGH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 50V 12DFN
***hardson RFPD
RF POWER TRANSISTOR
CGHV27030S GaN HEMT
Wolfspeed CGHV27030S 30W gallium-nitride (GaN) high electron mobility transistor (HEMT) provides wide bandwidth capabilities as well as high efficiency with high gain. Operating from DC-6.0GHz, CGHV27030S offers a 21dB gain, -36dBc ACLR, and 32% efficiency at 5W PAVE. The transistor is capable of operating with either a 28V or 50V rail. The CGHV27030S can also apply a high degree of ADP and DPD correction. The CGHV27030S GaN HEMT is well-suited for 700-960MHz, 1200-1400MHz, 1800-2200MHz, 2500-2700MHz, and 3300-3700MHz telecommunications applications operating at both 28V and 50V. The device is also ideal for 20-2500MHz tactical communications applications, L-Band RADAR, and S-Band RADAR.Learn More
Part # Mfg. Description Stock Price
CGHV27030S
DISTI # CGHV27030SCT-ND
WolfspeedRF MOSFET HEMT 50V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
371In Stock
  • 100:$56.2103
  • 1:$57.2300
CGHV27030S
DISTI # CGHV27030SDKR-ND
WolfspeedRF MOSFET HEMT 50V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
371In Stock
  • 100:$56.2103
  • 1:$57.2300
CGHV27030S
DISTI # CGHV27030STR-ND
WolfspeedRF MOSFET HEMT 50V 12DFN
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
250In Stock
  • 250:$51.1003
CGHV27030S
DISTI # 941-CGHV27030S
Cree, Inc.RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
RoHS: Compliant
54
  • 1:$51.1000
CGHV27030S-AMP2
DISTI # 941-CGHV27030S-AMP2
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
3
  • 1:$601.1000
CGHV27030S-AMP5
DISTI # 941-CGHV27030S-AMP5
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
2
  • 1:$601.1000
CGHV27030S-AMP1
DISTI # 941-CGHV27030S-AMP1
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
1
  • 1:$601.1000
CGHV27030S-AMP3
DISTI # 941-CGHV27030S-AMP3
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
1
  • 1:$601.1000
CGHV27030S-AMP4
DISTI # 941-CGHV27030S-AMP4
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
1
  • 1:$601.1000
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Availability
Stock:
128
On Order:
2111
Enter Quantity:
Current price of CGHV27030S is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$46.13
$46.13
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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