 |  | | |
| PartNumber | CGHV27030S | CGHV27030S-AMP2 | CGHV27030S-AMP1 |
| Description | RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt | RF Development Tools Test Board with GaN HEMT | RF Development Tools Test Board with GaN HEMT |
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN | - | - |
| Gain | 21 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - | - |
| Id Continuous Drain Current | 3.6 A | - | - |
| Output Power | 30 W | - | - |
| Maximum Drain Gate Voltage | 50 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 12 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-12 | - | - |
| Packaging | Reel | - | - |
| Application | Telecom | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 2.7 GHz | - | - |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
CGHV27030S | RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt | |
| CGHV27030S | RF MOSFET HEMT 50V 12DFN | ||
| CGHV27030S-AMP2 | RF Development Tools Test Board with GaN HEMT | ||
| CGHV27030S-AMP5 | RF Development Tools Test Board with GaN HEMT | ||
| CGHV27030S-AMP1 | RF Development Tools Test Board with GaN HEMT | ||
| CGHV27030S-AMP3 | RF Development Tools Test Board with GaN HEMT | ||
| CGHV27030S-AMP4 | RF Development Tools Test Board with GaN HEMT |