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AOB7S65L

AOB7S65L
Mfr. #:
AOB7S65L
Manufacturer:
Alpha & Omega Semiconductor Inc
Description:
MOSFET N-CH 650V 7A TO263
Lifecycle:
New from this manufacturer.
Datasheet:
AOB7S65L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
AOB7, AOB
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Power Field-Effect Transistor, 37A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 650V 7A TO263
***ical
Trans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
***ponent Stockers USA
10.6 A 650 V 0.38 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***inecomponents.com
Trans MOSFET N-CH 500V 5.5A 3-Pin (2+Tab) D2PAK T/R
***ser
MOSFETs 500V N-Channel QFET
***el Nordic
Contact for details
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
***sible Micro
(CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5
***ure Electronics
N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***et
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***enic
600V 4.5A 2´Î@10V2.25A 100W 4V@250uA 6.5pF@25V N Channel 515pF@25V 15nC@10V -55¡Í~+150¡Í@(Tj) D2PAK MOSFETs ROHS
***i-Key
MOSFET N-CH 600V 4.5A D2PAK
***nsix Microsemi
Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Discrete Mosfet / Reel
***S
new, original packaged
Part # Mfg. Description Stock Price
AOB7S65L
DISTI # 785-1538-2-ND		Alpha & Omega SemiconductorMOSFET N-CH 650V 7A TO263
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$1.0791
Image Part # Description
AOB7S60

Mfr.#: AOB7S60

OMO.#: OMO-AOB7S60-1190

 New and Original
AOB7S60L

Mfr.#: AOB7S60L

OMO.#: OMO-AOB7S60L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 600V D2PAK
AOB7S65

Mfr.#: AOB7S65

OMO.#: OMO-AOB7S65-1190

 New and Original
AOB7S65L

Mfr.#: AOB7S65L

OMO.#: OMO-AOB7S65L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 650V 7A TO263
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of AOB7S65L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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