JAN2N4261UB/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

LCC-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 15 V

Collector- Base Voltage VCBO:

- 15 V

Emitter- Base Voltage VEBO:

- 4.5 V

Collector-Emitter Saturation Voltage:

- 0.15 V

Maximum DC Collector Current:

- 30 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

150 at - 10 mA, - 1 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

20 at - 30 mA, - 1 V

Pd - Power Dissipation:

200 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

JAN2N426, JAN2N42, Jan2N4, Jan2N, Jan2, JAN