SUM110P04-05-E3

Mfr. #:: SUM110P04-05-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 40V 110A 375W
Lifecycle:: New from this manufacturer.
Datasheet:: SUM110P04-05-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SUM110P04-05-E3 Datasheet SUM110P04-05-E3 Datasheet (P4-P6)SUM110P04-05-E3 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 110 A

Rds On - Drain-Source Resistance:: 5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 185 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 375 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Height:: 4.83 mm

Length:: 10.67 mm

Series:: SUM

Transistor Type:: 1 P-Channel

Width:: 9.65 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 75 S

Fall Time:: 35 ns

Product Type:: MOSFET

Rise Time:: 290 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 110 ns

Typical Turn-On Delay Time:: 25 ns

Unit Weight:: 0.050717 oz

Tags: SUM110P04-05, SUM110P04-0, SUM110P04, SUM110P, SUM110, SUM11, SUM1, SUM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SUM110P04-05-E3 Description

***(Formerly Allied Electronics): MOSFET; P-Ch; Vds -40V; Vgs +/- 20V; Rds(on) 5mohm; Id 110A; TO-263; Pd 375W

***roFlash: Power Field-Effect Transistor, 39A I(D), 40V, 0.005ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-11000mA; Drain Source Voltage, Vds:-40V; On Resistance, Rds(on):0.005ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:15W ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,P CH,40V,110A,D2PAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:-40V; On Resistance Rds(on):4.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:15W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:-39A; Power Dissipation Pd:15W; Voltage Vgs Max:-20V

***i-Key: MOSFET N-CH 55V 100A TO-263

*** Electronics: OPTLMOS N-CHANNEL POWER MOSFET

***et: TO263-3/AUTOMOTIVE MOS TRANSISTO

***et: Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-263

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ure Electronics: N-Channel 60 V 3.5 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ

***Yang: Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 22A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:80A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD

***ure Electronics: Single P-Channel 80 V 0.0111 O 113 nC Surface Mount Power Mosfet -TO-263 (D2PAK)

***roFlash: Power Field-Effect Transistor, 110A I(D), 80V, 0.0112ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-11000mA; Drain Source Voltage, Vds:-80V; On Resistance, Rds(on):0.0145ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:13.6W ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,P CH,80V,110A,D2PAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:-80V; On Resistance Rds(on):9.3mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:13.6W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:-23.5A; Power Dissipation Pd:13.6W; Voltage Vgs Max:-20V

***emi: N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

***et Europe: Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:11400pF; Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:80A; Reverse Recovery Time trr Typ:59ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

***(Formerly Allied Electronics): P-channel MOSFET Transistor 110 A 60 V 2+Tab-Pin TO-263

***ure Electronics: Single P-Channel 60 V 6.9 mOhm Surface Mount Power Mosfet - TO-263

***roFlash: Power Field-Effect Transistor, 110A I(D), 60V, 0.0069ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET,P CH,60V,110A,D2PAK; Transistor Polarity:P Channel; Drain Source Voltage Vds:-60V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:-110A; Power Dissipation Pd:3.75W; Voltage Vgs Max:-20V

Market price

Part #	Mfg.	Description	Stock	Price
SUM110P04-05-E3 DISTI # SUM110P04-05-E3CT-ND	Vishay Siliconix	MOSFET P-CH 40V 110A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	630In Stock	100:$3.9717 10:$4.8440 1:$5.4200
SUM110P04-05-E3 DISTI # SUM110P04-05-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 40V 110A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	630In Stock	100:$3.9717 10:$4.8440 1:$5.4200
SUM110P04-05-E3 DISTI # SUM110P04-05-E3TR-ND	Vishay Siliconix	MOSFET P-CH 40V 110A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	On Order	800:$2.8215
SUM110P04-05-E3 DISTI # SUM110P04-05-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 39A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM110P04-05-E3) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$1.7900 1600:$1.6900 3200:$1.6900 4800:$1.5900 8000:$1.5900
SUM110P04-05-E3 DISTI # SUM110P04-05-E3	Vishay Intertechnologies	Trans MOSFET P-CH 40V 39A 3-Pin(2+Tab) TO-263 (Alt: SUM110P04-05-E3) RoHS: Compliant Min Qty: 800	Asia - 0
SUM110P04-05-E3 DISTI # 96K5342	Vishay Intertechnologies	Trans MOSFET P-CH 40V 39A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 96K5342) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$3.5800 10:$2.9700 25:$2.7900 50:$2.6200 100:$2.4400 250:$2.3700 500:$2.1200
SUM110P04-05-E3 DISTI # 29X0565	Vishay Intertechnologies	MOSFET, P CHANNEL, -40V, -110A, TO-263-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-110A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:3Pins RoHS Compliant: Yes	0	20000:$2.1100 12000:$2.1400 8000:$2.2300 4000:$2.4000 2000:$2.5700 1:$2.6900
SUM110P04-05-E3 DISTI # 96K5342	Vishay Intertechnologies	MOSFET, P CHANNEL, -40V, -110A, TO-263-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-110A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	2086	500:$2.6500 250:$2.9600 100:$3.0500 50:$3.2800 25:$3.4900 10:$3.7100 1:$4.4800
SUM110P04-05-E3 DISTI # 70026417	Vishay Siliconix	MOSFET,P-Ch,Vds -40V,Vgs +/- 20V,Rds(on) 5mohm,Id 110A,TO-263,Pd 375W RoHS: Compliant	0	1:$3.2800 25:$3.1200 100:$2.9600 250:$2.8100 500:$2.6700
SUM110P04-05-E3 DISTI # 781-SUM110P04-05-E3	Vishay Intertechnologies	MOSFET 40V 110A 375W RoHS: Compliant	10	1:$3.5800 10:$2.9700 100:$2.4400 250:$2.3700 500:$2.1200 800:$1.7900 2400:$1.7000
SUM110P04-05-E3	Vishay Intertechnologies		171
SUM110P04-05-E3		INSTOCK	19
SUM110P04-05-E3 DISTI # XSFP00000065725	Vishay Siliconix	RoHS: Compliant	1600	2400:$3.6500 800:$3.9100
SUM110P04-05-E3 DISTI # 1839011	Vishay Intertechnologies	MOSFET,P CH,40V,110A,D2PAK RoHS: Compliant	4929	500:$3.5000 250:$3.7500 100:$3.8700 10:$4.7100 1:$5.6700
SUM110P04-05-E3	Vishay Intertechnologies	MOSFET 40V 110A 375W	Americas - 1600
SUM110P04-05-E3.	Vishay Intertechnologies	MOSFET 40V 110A 375W	Americas - 680	10:$2.6730
SUM110P04-04L-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SUM110P04-05-E3	Americas - 1600
SUM110P04-05-E3 DISTI # 1839011	Vishay Intertechnologies	MOSFET,P CH,40V,110A,D2PAK RoHS: Compliant	6673	500:£1.9500 250:£2.0100 100:£2.0600 10:£2.2600 1:£3.0700

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of SUM110P04-05-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.42~~; ~~$5.42~~

10: ~~$4.84~~; ~~$48.40~~

100: ~~$3.97~~; ~~$397.00~~

250: ~~$3.45~~; ~~$862.50~~

500: ~~$3.12~~; ~~$1 560.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SUM110P04-05-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes