SI4670DY-T1-GE3

Mfr. #:: SI4670DY-T1-GE3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET Dual N-ChW/ Schottky 25V 23mohms @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SI4670DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI4670DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay Siliconix

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI4670DY-GE3

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual with Schottky Diode

FET-Type: 2 N-Channel (Dual)

Power-Max: 2.8W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 25V

Input-Capacitance-Ciss-Vds: 680pF @ 13V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 23 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.2V @ 250μA

Gate-Charge-Qg-Vgs: 18nC @ 10V

Pd-Power-Dissipation: 1.8 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 50 ns

Rise-Time: 50 ns

Vgs-Gate-Source-Voltage: 16 V

Id-Continuous-Drain-Current: 7 A

Vds-Drain-Source-Breakdown-Voltage: 25 V

Rds-On-Drain-Source-Resistance: 23 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 20 ns

Typical-Turn-On-Delay-Time: 15 ns

Channel-Mode: Enhancement

Tags: SI4670DY-T, SI4670D, SI4670, SI467, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4670DY-T1-GE3 Description

***et: Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R

***i-Key: MOSFET 2N-CH 25V 8A 8-SOIC

***ark: Transistor; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:1.8W ;RoHS Compliant: Yes

SI4670DY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4670DY-T1-GE3 DISTI # SI4670DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.5236
SI4670DY-T1-GE3 DISTI # SI4670DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4670DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4939 5000:$0.4799 10000:$0.4599 15000:$0.4469 25000:$0.4349
SI4670DY-T1-GE3 DISTI # 781-SI4670DY-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 16V Vgs SO-8 RoHS: Compliant	0	2500:$0.4760 5000:$0.4530 10000:$0.4360

Related products

Image	Part #	Description
	Mfr.#: SI4670DY-T1-E3 OMO.#: OMO-SI4670DY-T1-E3	MOSFET 25V Vds 16V Vgs SO-8
	Mfr.#: SI4670DY-T1-GE3 OMO.#: OMO-SI4670DY-T1-GE3	MOSFET 25V Vds 16V Vgs SO-8
	Mfr.#: SI4670DY-T1-GE3 OMO.#: OMO-SI4670DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET Dual N-ChW/ Schottky 25V 23mohms @ 10V
	Mfr.#: SI4670DY-T1-E3 OMO.#: OMO-SI4670DY-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
	Mfr.#: SI4670DY OMO.#: OMO-SI4670DY-1190	New and Original
	Mfr.#: SI4670DY-T1-E3-S OMO.#: OMO-SI4670DY-T1-E3-S-1190	New and Original
	Mfr.#: SI4670DY-T1-E3.. OMO.#: OMO-SI4670DY-T1-E3--1190	New and Original

Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of SI4670DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.65~~; ~~$0.65~~

10: ~~$0.62~~; ~~$6.20~~

100: ~~$0.59~~; ~~$58.71~~

500: ~~$0.55~~; ~~$277.25~~

1000: ~~$0.52~~; ~~$521.90~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SI4670DY-T 4
SI4670D 5
SI4670 6
SI467 9
SI46 145
SI4 2994

SI4670DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes