APT17F100B

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

17 A

Rds On - Drain-Source Resistance:

670 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

150 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

625 W

Channel Mode:

Enhancement

Tradename:

POWER MOS 8

Packaging:

Tube

Height:

5.31 mm

Length:

21.46 mm

Width:

16.26 mm

Brand:

Microchip / Microsemi

Forward Transconductance - Min:

19 S

Fall Time:

28 ns

Product Type:

MOSFET

Rise Time:

31 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

105 ns

Typical Turn-On Delay Time:

29 ns

Unit Weight:

1.340411 oz

Tags

APT17F, APT17, APT1, APT