SKM75GB063D

Mfr. #:: SKM75GB063D
Manufacturer:: SEMIKRON
Description:: SEMITRANS, 600V, 100A
Lifecycle:: New from this manufacturer.
Datasheet:: SKM75GB063D Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: SEMIKRON

Product Category: IC Chips

Tags: SKM75GB, SKM75G, SKM75, SKM7, SKM

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SKM75GB063D Description

***ark: Transistor,igbt Power Module,half Bridge,600V V(Br)Ces,100A I(C)

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

***ikron: not recommended for new design Features: N channel, homogeneous Si-structure (NPT-Non punch-through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies UPS Three phase inverters for servo / AC motor speed control Pulse frequencies also > 10kHz

***ure Electronics: FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***trelec: Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray

***ineon: Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***p One Stop: Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray

***ment14 APAC: IGBT, LOW POW, 1200V, 15A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:130W

***ineon: EasyPIM 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

*** Stop Electro: Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP

*** Electronic Components: Bipolar Transistors - BJT NPN Power Module

***ow.cn: Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube

***nell: TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style

***ark: BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

***et: Motor / Motion / Ignition Controllers & Drivers 600V/50A

***inecomponents.com: 600V, 50A IGBT Module (Molding Type)

***el Electronic: IC REG CONV DDR BUS 1OUT 8MSOP

***omponent: Fairchild Semiconductor power module

***nell: IGBT MODULE, 600V, 50A; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:600V; Current, Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:250W; Case Style:7PM-GA; Termination Type:Screw; Centres, Fixing:80mm; Current, Icm Pulsed:100A; Depth, External:93mm; Diameter, Fixing Hole:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:250W; Time, Rise:30ns; Transistors, No. of:2; Voltage, Vceo:600V

***et: Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail

***el Electronic: IGBT MODULE 600V 100A 400W EPM7

***DA Technology Co., Ltd.: Product Description Demo for Development.

Market price

Part #	Mfg.	Description	Stock	Price
SKM 75 GB063D DISTI # 23H0689	SEMIKRON	TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,100A I(C)	0	100:$38.5200 50:$40.9800 25:$41.6000 10:$42.2100 5:$43.4500 1:$44.6800
SKM75GB063D DISTI # 71043329	SEMIKRON	SEMITRANS,600V,100A RoHS: Compliant	0	1:$77.7000 8:$73.6900 64:$68.9200 96:$64.7600 144:$61.0500
SKM75GB063D DISTI # SKM75GB063D	SEMIKRON	POWER IGBT TRANSISTOR RoHS: Compliant	0
SKM75GB063D	SEMIKRON	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	10

Image	Part #	Description
	Mfr.#: SKM75DGDL 066T OMO.#: OMO-SKM75DGDL-066T-1190	New and Original
	Mfr.#: SKM75GA161D OMO.#: OMO-SKM75GA161D-1190	New and Original
	Mfr.#: SKM75GB063D OMO.#: OMO-SKM75GB063D-1190	SEMITRANS, 600V, 100A
	Mfr.#: SKM75GB123-D OMO.#: OMO-SKM75GB123-D-1190	New and Original
	Mfr.#: SKM75GB124D OMO.#: OMO-SKM75GB124D-1190	New and Original
	Mfr.#: SKM75GB128DE OMO.#: OMO-SKM75GB128DE-1190	New and Original
	Mfr.#: SKM75GB128DN2 OMO.#: OMO-SKM75GB128DN2-1190	New and Original
	Mfr.#: SKM75GD101D OMO.#: OMO-SKM75GD101D-1190	New and Original
	Mfr.#: SKM75GD121D OMO.#: OMO-SKM75GD121D-1190	New and Original
	Mfr.#: SKM75GD123D OMO.#: OMO-SKM75GD123D-1190	New and Original

SKM75GB063D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes