SPI10N10L

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

10.3 A

Rds On - Drain-Source Resistance:

154 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

17.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

50 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

4.7 S

Fall Time:

17.8 ns

Product Type:

MOSFET

Rise Time:

19.1 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27.8 ns

Typical Turn-On Delay Time:

4.6 ns

Unit Weight:

0.084199 oz

Tags

SPI10N, SPI10, SPI1, SPI