PartNumber | SPI11N60C3HKSA1 | SPI10N10L | SPI11N65C3HKSA1 |
Description | MOSFET Order Manufacturer Part Number SPI11N60C3 | MOSFET N-Ch 100V 10.3A I2PAK-3 | MOSFET Order Manufacturer Part Number SPI11N65C3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
Tradename | CoolMOS | - | CoolMOS |
Height | 9.45 mm | 9.45 mm | 9.45 mm |
Length | 10.2 mm | 10.2 mm | 10.2 mm |
Width | 4.5 mm | 4.5 mm | 4.5 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SP000013522 SPI11N60C3 SPI11N60C3XK | - | SP000014526 SPI11N65C3 SPI11N65C3XK |
RoHS | - | Y | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 10.3 A | - |
Rds On Drain Source Resistance | - | 154 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 17.7 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 50 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Packaging | - | Tube | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 4.7 S | - |
Fall Time | - | 17.8 ns | - |
Rise Time | - | 19.1 ns | - |
Factory Pack Quantity | - | 500 | - |
Typical Turn Off Delay Time | - | 27.8 ns | - |
Typical Turn On Delay Time | - | 4.6 ns | - |
Unit Weight | - | 0.084199 oz | - |