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SIR168DP-T1-GE3

SIR168DP-T1-GE3
Mfr. #:
SIR168DP-T1-GE3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SIR168DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
VISHAY
Product Category
IC Chips
Series
SIRxxxDP
Packaging
Reel
Part-Aliases
SIR168DP-GE3
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
SO-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
34.7 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
40 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
4.4 mOhms
Transistor-Polarity
N-Channel
Tags
SIR16, SIR1, SIR
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 25.1A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:40A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0044ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
SIR168DP-T1-GE3
DISTI # SIR168DP-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$0.4389
SIR168DP-T1-GE3
DISTI # 781-SIR168DP-GE3		Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10V
RoHS: Compliant		0
    SIR168DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 40A 34.7W 4.4mohm @ 10VAmericas -
      Image Part # Description
      SIR168DP-T1-GE3

      Mfr.#: SIR168DP-T1-GE3

      OMO.#: OMO-SIR168DP-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 30V 40A 34.7W 4.4mohm @ 10V
      SIR168DP

      Mfr.#: SIR168DP

      OMO.#: OMO-SIR168DP-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of SIR168DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.55
      $0.55
      10
      $0.52
      $5.20
      100
      $0.49
      $49.26
      500
      $0.47
      $232.60
      1000
      $0.44
      $437.90
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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