BF511,215

Mfr. #:: BF511,215
Manufacturer:: NXP Semiconductors
Description:: RF JFET Transistors JFET N-CH 20V 10MA
Lifecycle:: New from this manufacturer.
Datasheet:: BF511,215 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BF511,215 Datasheet BF511,215 Datasheet (P4-P6)BF511,215 Datasheet (P7-P9)
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More Information:: BF511,215 more Information BF511,215 Product Details

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Tags: BF511, BF51, BF5

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Step1:
Vacuum Packaging with PL

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BF511,215 Description

***p One Stop: Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R

***nell: RF JFET, N CHANNEL, 20V, 7MA, 3-SOT-23

*** Americas: STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'

*** Semiconductors SCT: N-channel silicon FET, TO-236AB, RoHS

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR MOSFET

***ark: Rf Jfet, N Channel, 20V, 7Ma, 3-Sot-23; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7Ma; Power Dissipation Pd:250Mw; Operating Frequency Min:-; Operating Frequency Max:-; Rf Transistor Case:sot-23; No. Of Pins:3Pins Rohs Compliant: Yes

***ure Electronics: BF861 Series 25 V 6.5 mA 250 mW N-channel Junction FET - SOT-23-3

***ark: RF JFET, N CH, 25V, 15MA, 3-SOT-23, FULL REEL; Gate Source Breakdown Voltage Max:-25V; Zero Gate Voltage Drain Current Max:15mA; Gate Source Cutoff Voltage Max:-1.5V; No. of Pins:3 Pin; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

***nell: JET, N CH, 25V, SOT-23; Breakdown Voltage Vbr: -25V; Zero Gate Voltage Drain Current Idss Min: 6mA; Zero Gate Voltage Drain Current Idss Max: 15mA; Gate-Source Cutoff Voltage Vgs(off) Max: -1.5V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Current Idss Max: 15mA; Current Idss Min: 6mA; No. of Pins: 3Pins; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 250mW; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Zero Gate Voltage Drain Current Idss: 6mA to 15mA

***ure Electronics: BF862 Series 20 V 25 mA Surface Mount N-Channel Junction FET - TO-236AB

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 300 mW

***ical: Trans JFET N-CH 20V Automotive 3-Pin TO-236AB T/R

***ment14 APAC: RF FET, N CH, 20V, 25MA, 3-SOT-23; TRANS; Transistor Type:RF FET; Breakdown Voltage Vbr:-20V; Zero Gate

***nell: RF FET, N CHANNEL, 20V, 25MA, 3-SOT-23

***roFlash: Small Signal Field-Effect Transistor, 0.04A I(D), 20V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB

***peria: BF862 - N-channel junction FET

***ark: RF JFET, N CHANNEL, 20V, 25MA, 3-SOT-23, FULL REEL; Gate Source Breakdown Voltage Max:-20V; Zero Gate Voltage Drain Current Max:25mA; Gate Source Cutoff Voltage Max:-1.2V; No. of Pins:3 Pin; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

***ure Electronics: PMBFJ108 Series Single N Channel 25 V 12 Ohm Surface Mount JFET - SOT-23

***nell: RF JFET, N CHANNEL, 25V, 40MA, 3-SOT-23

***ical: Trans JFET N-CH 25V 3-Pin TO-236AB T/R

*** Americas: STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'

***el Electronic: NPN 25V 250mW Transistors (NPN/PNP)

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR MOSFET

***ark: Rf Jfet, N Channel, 25V, 40Ma, 3-Sot-23; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss Max:40Ma; Gate-Source Cutoff Voltage Vgs(Off) Max:-2V; Transistor Type:-; Msl:- Rohs Compliant: Yes

***ure Electronics: MMBFJ309 Series N-Channel 25 V 30 mA Surface Mount RF Amplifier - SOT-23-3

***-Wing Technology: FAIRCHILD SEMICONDUCTOR MMBFJ309 N CHANNEL JFET, -25V, SOT-23

***ark: Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA

***rchild Semiconductor: This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

***ure Electronics: MMBF5485 Series 25 V 10 mA Surface Mount N-Channel RF Amplifier - SOT-23-3

***r Electronics: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***rchild Semiconductor: This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

***r Electronics: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

***ark: Bipolar Transistor; Package/Case:3-SuperSOT; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:3000; Current Rating:30mA; No. of Pins:3; Voltage Rating:-25V ;RoHS Compliant: Yes

***nell: TRANSISTOR, JFET, N-CH, -25V, SUPERSOT-3; Breakdown Voltage Vbr: -25V; Zero Gate Voltage Drain Current Idss Min: 30mA; Zero Gate Voltage Drain Current Idss Max: -; Gate-Source Cutoff Voltage Vgs(off) Max: -4V; Transistor Case Style: SuperSOT; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Market price

Part #	Mfg.	Description	Stock	Price
BF511,215 DISTI # V72:2272_06518153	NXP Semiconductors	Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R RoHS: Compliant	2940	1:$0.9001
BF511,215 DISTI # 568-1965-1-ND	NXP Semiconductors	JFET N-CH 20V 30MA SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2691In Stock	1000:$0.4428 500:$0.5386 100:$0.6654 10:$0.8500 1:$0.9600
BF511,215 DISTI # 568-1965-2-ND	NXP Semiconductors	JFET N-CH 20V 30MA SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call	3000:$0.3592
BF511,215 DISTI # 568-1965-6-ND	NXP Semiconductors	JFET N-CH 20V 30MA SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BF511,215 DISTI # 19004926	NXP Semiconductors	Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R RoHS: Compliant	3000	3000:$0.2142
BF511,215 DISTI # 25749530	NXP Semiconductors	Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R RoHS: Compliant	2940	1000:$0.2918 500:$0.4864 250:$0.5387 100:$0.6197 25:$0.7200 24:$0.7935
BF511,215 DISTI # 31064973	NXP Semiconductors	Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R RoHS: Compliant	2460	44:$0.2307
BF511,215 DISTI # BF511,215	Avnet, Inc.	Trans JFET N-CH 20V 30mA 3-Pin TO-236AB T/R (Alt: BF511,215) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3059 6000:€0.2809 12000:€0.2799 18000:€0.2799 30000:€0.2789
BF511,215 DISTI # 70R2613	NXP Semiconductors	RF JFET, N CHANNEL, 20V, 7MA, 3-SOT-23, FULL REEL,Drain Source Voltage Vds:20V,Continuous Drain Current Id:7mA,Power Dissipation Pd:250mW,Operating Frequency Min:-,Operating Frequency Max:-,RF Transistor Case:SOT-23,MSL:- RoHS Compliant: Yes	0	1:$0.4650
BF511,215 DISTI # 75R4672	NXP Semiconductors	RF JFET, N CHANNEL, 20V, 7MA, 3-SOT-23,Drain Source Voltage Vds:20V,Continuous Drain Current Id:7mA,Power Dissipation Pd:250mW,Operating Frequency Min:-,Operating Frequency Max:-,RF Transistor Case:SOT-23,No. of Pins:3Pins RoHS Compliant: Yes	0	1000:$0.3390 500:$0.3670 250:$0.3950 100:$0.4230 50:$0.5390 25:$0.6550 1:$0.7900
BF511215	NXP Semiconductors	RoHS: Not Compliant	3000	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
BF511,215 DISTI # 771-BF511-T/R	NXP Semiconductors	RF JFET Transistors JFET N-CH 20V 10MA RoHS: Compliant	2914	1:$0.9300 10:$0.8320 25:$0.7510 100:$0.6580 250:$0.5770 500:$0.5100 1000:$0.4030 3000:$0.3580 6000:$0.3260
BF511,215 DISTI # BF511-215	NXP Semiconductors	RF SMALL SIGNAL TRANSISTOR MOSFET RoHS: Compliant	0	3000:$0.3400
BF511,215 DISTI # XSFP00000083018	NXP Semiconductors	RoHS: Compliant	9000	9000:$0.4545 3000:$0.5000
BF511,215 DISTI # C1S537100173649	NXP Semiconductors	Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R RoHS: Compliant	20	10:$0.4290

Image	Part #	Description
	Mfr.#: BF510,215 OMO.#: OMO-BF510-215	RF JFET Transistors TAPE7 FET-RFSS
	Mfr.#: BF510 , SPD07N60C3 , OUJ OMO.#: OMO-BF510-SPD07N60C3-OUJ-NXP-SEMICONDUCTORS	New and Original
	Mfr.#: BF5101LC01 OMO.#: OMO-BF5101LC01-NXP-SEMICONDUCTORS	New and Original
	Mfr.#: BF511 OMO.#: OMO-BF511-NXP-SEMICONDUCTORS	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
	Mfr.#: BF512 OMO.#: OMO-BF512-NXP-SEMICONDUCTORS	DSP Fixed-Point 16bit/32bit 400MHz 176-Pin LQFP EP Tray
	Mfr.#: BF512(S8P) OMO.#: OMO-BF512-S8P--PHILIPS	New and Original
	Mfr.#: BF513215 OMO.#: OMO-BF513215-NXP-SEMICONDUCTORS	- Bulk (Alt: BF513215)
	Mfr.#: BF517 E6359 OMO.#: OMO-BF517-E6359-INFINEON-TECHNOLOGIES	New and Original
	Mfr.#: BF5176327 OMO.#: OMO-BF5176327-INFINEON-TECHNOLOGIES	New and Original
	Mfr.#: BF511,215 OMO.#: OMO-BF511-215-NXP-SEMICONDUCTORS	RF JFET Transistors JFET N-CH 20V 10MA

BF511,215

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes