DMP32D5LFA-7B

DMP32D5LFA-7B
Mfr. #:
DMP32D5LFA-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm
Lifecycle:
New from this manufacturer.
Datasheet:
DMP32D5LFA-7B Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMP32D5LFA-7B DatasheetDMP32D5LFA-7B Datasheet (P4-P6)
ECAD Model:
More Information:
DMP32D5LFA-7B more Information
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
X2-DFN0806-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
300 mA
Rds On - Drain-Source Resistance:
900 mOhms
Vgs th - Gate-Source Threshold Voltage:
400 mV
Vgs - Gate-Source Voltage:
8 V
Qg - Gate Charge:
700 pC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
360 mW
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
DMP32
Transistor Type:
1 P-Channel
Brand:
Diodes Incorporated
Fall Time:
58 ns
Product Type:
MOSFET
Rise Time:
40 ns
Factory Pack Quantity:
10000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
144 ns
Typical Turn-On Delay Time:
20 ns
Tags
DMP32, DMP3, DMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
MOSFET BVDSS: 25V~30V X2-DFN0806-3 T&R 10K
***roFlash
Mosfet P-ch 30V 0.3A DFN0806-3
***i-Key
MOSFET P-CH 30V 300MA 3DFN
***emi
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***ical
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***r Electronics
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***el Electronic
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***ure Electronics
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***des Inc SCT
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***(Formerly Allied Electronics)
MOSFET N-Ch 30V 270mA Enhanc. SOT-523
***ark
Mosfet Bvdss: 25V~30V Sot523 T&r 3K
***el Electronic
IC DUAL 1-4 DATASELCT/MUX 16SOIC
***ark
Mosfet, N-Ch, 30V, 0.22A, X2-Dfn0603 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 30V 0.22A 3-Pin X2-DFN T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 12±V VGS
***ure Electronics
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***ark
Mosfet, N-Ch, 30V, 0.38A, Sot-323 Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***et
MOSFET BVDSS: 25V~30V SOT323 T&R 3K
***Yang
Trans MOSFET N-CH 25V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
***id Electronics
Transistor MOSFET N-Ch. 25V 220mA 0,35W 4Ohm SOT23 FDV301N
***enic
25V 220mA 4¦¸@4.5V,400mA 350mW 1.06V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 350 mW
***rchild Semiconductor
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
***ment14 APAC
N CHANNEL MOSFET, 220MA, 25V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:2.7V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:350mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:220mA; Current Temperature:25°C; ESD HBM:6kV; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Pulse Current Idm:500mA; SMD Marking:301; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
***Yang
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin TSOT-23 T/R - Tape and Reel
*** Electronics
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
***fin
Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS milliampere=220 V=25 SSOT6
***ment14 APAC
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:25V; On
***el Electronic
Chip Resistor - Surface Mount 2Ohm 1206 (3216 Metric) ±1% ±200ppm/°C Thick Film Digi-Reel® 2 1 (Unlimited) ERJ Res Thick Film 1206 2 Ohm 1% 1/4W ±200ppm/°C Molded SMD Punched Carrier T/R
***nell
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 850mV; Power Dissipation Pd: 900mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
DMPxx P-Channel Enhancement Mode MOSFET
Diodes Inc. DMPxx P-Channel Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)) and maintain superior switching performance. They're ideal for high-efficiency power management applications. Typical applications are for battery management applications, power management functions and DC-DC converters.Learn More
Part # Mfg. Description Stock Price
DMP32D5LFA-7B
DISTI # DMP32D5LFA-7BDICT-ND
Diodes IncorporatedMOSFET P-CH 30V 0.3A DFN0806-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8398In Stock
  • 1000:$0.0780
  • 500:$0.1147
  • 100:$0.1744
  • 10:$0.3290
  • 1:$0.4000
DMP32D5LFA-7B
DISTI # DMP32D5LFA-7BDIDKR-ND
Diodes IncorporatedMOSFET P-CH 30V 0.3A DFN0806-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    DMP32D5LFA-7B
    DISTI # DMP32D5LFA-7BDITR-ND
    Diodes IncorporatedMOSFET P-CH 30V 0.3A DFN0806-3
    RoHS: Compliant
    Min Qty: 10000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 10000:$0.0505
    DMP32D5LFA-7B
    DISTI # DMP32D5LFA-7BDI-ND
    Diodes IncorporatedMOSFET P-CH 30V 0.3A DFN0806-3
    RoHS: Compliant
    Min Qty: 10000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 10000:$0.0505
    DMP32D5LFA-7B
    DISTI # DMP32D5LFA-7B
    Diodes IncorporatedMOSFET BVDSS: 25V~30V X2-DFN0806-3 T&R 10K - Tape and Reel (Alt: DMP32D5LFA-7B)
    RoHS: Not Compliant
    Min Qty: 10000
    Container: Reel
    Americas - 0
    • 10000:$0.0317
    • 20000:$0.0301
    • 40000:$0.0287
    • 60000:$0.0274
    • 100000:$0.0268
    DMP32D5LFA-7B
    DISTI # 621-DMP32D5LFA-7B
    Diodes IncorporatedMOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm
    RoHS: Compliant
    0
    • 1:$0.3600
    • 10:$0.2430
    • 100:$0.1020
    • 1000:$0.0690
    • 2500:$0.0540
    • 10000:$0.0460
    Image Part # Description
    DMP32D4SW-7

    Mfr.#: DMP32D4SW-7

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    Mfr.#: DMP32D4S-7

    OMO.#: OMO-DMP32D4S-7

    MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA
    DMP32D5LFA-7B

    Mfr.#: DMP32D5LFA-7B

    OMO.#: OMO-DMP32D5LFA-7B

    MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm
    DMP32D9UDA-7B

    Mfr.#: DMP32D9UDA-7B

    OMO.#: OMO-DMP32D9UDA-7B

    MOSFET MOSFET BVDSS: 25V-30V
    DMP32D4SW-13-F

    Mfr.#: DMP32D4SW-13-F

    OMO.#: OMO-DMP32D4SW-13-F-1190

    New and Original
    DMP32D9UFZ-7B

    Mfr.#: DMP32D9UFZ-7B

    OMO.#: OMO-DMP32D9UFZ-7B-DIODES

    Trans MOSFET P-CH 30V 0.2A 3-Pin X2-DFN T/R
    DMP32D5LFA-7B

    Mfr.#: DMP32D5LFA-7B

    OMO.#: OMO-DMP32D5LFA-7B-DIODES

    Darlington Transistors MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm
    DMP32D4SFB-7B

    Mfr.#: DMP32D4SFB-7B

    OMO.#: OMO-DMP32D4SFB-7B-DIODES

    MOSFET 30V P-CH MOSFET
    DMP32D4S-7

    Mfr.#: DMP32D4S-7

    OMO.#: OMO-DMP32D4S-7-DIODES

    MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA
    DMP32D4S-13

    Mfr.#: DMP32D4S-13

    OMO.#: OMO-DMP32D4S-13-DIODES

    MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA
    Availability
    Stock:
    Available
    On Order:
    1000
    Enter Quantity:
    Current price of DMP32D5LFA-7B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.35
    $0.35
    10
    $0.24
    $2.43
    100
    $0.10
    $10.20
    1000
    $0.07
    $69.00
    2500
    $0.05
    $135.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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