IPB029N06N3GE8187ATMA1

Mfr. #:: IPB029N06N3GE8187ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 120A D2PAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB029N06N3GE8187ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 2.9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 53 nC

Pd - Power Dissipation:: 188 W

Configuration:: Single

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: IPB029N06

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: E8187 G IPB029N06N3 IPB29N6N3GE8187XT SP000939334

Unit Weight:: 0.068654 oz

Tags: IPB029N06N3, IPB029, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB029N06N3GE8187ATMA1 Description

***et: Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R

***el Electronic: MOSFET N-CH 60V 120A TO263-3

***ineon SCT: 60V, N-Ch, 2.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

***ineon SCT: 60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

***ical: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

***emi: N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ

***ow.cn: Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: N-Channel 60 V 2.1 mOhm 375 W SMT TrenchFET Power Mosfet - TO-263

***ark: Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes

*** Americas: N-CHANNEL 60-V (D-S) MOSFET

***ical: Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ

***r Electronics: Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Market price

Part #	Mfg.	Description	Stock	Price
IPB029N06N3GE8187ATMA1 DISTI # IPB029N06N3GE8187ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.0671
IPB029N06N3GE8187ATMA1 DISTI # IPB029N06N3GE8187ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GE8187ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.9629 2000:$0.9289 4000:$0.8949 6000:$0.8649 10000:$0.8499
IPB029N06N3GE8187ATMA1 DISTI # 726-IPB029N06N3GE818	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant	0	1:$1.9700 10:$1.6800 100:$1.3400 500:$1.1800 1000:$0.9700
IPB029N06N3GE8187ATMA1 DISTI # 8269200P	Infineon Technologies AG	MOSFET N-CH 120A 60V OPTIMOS3 TO263, RL	310	50:£1.0490 100:£0.9560

Image	Part #	Description
	Mfr.#: IPB029N06N3GATMA1 OMO.#: OMO-IPB029N06N3GATMA1	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
	Mfr.#: IPB029N06N3GE8187ATMA1 OMO.#: OMO-IPB029N06N3GE8187ATMA1	MOSFET N-Ch 60V 120A D2PAK-2
	Mfr.#: IPB029N06N3GATMA1 OMO.#: OMO-IPB029N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 120A TO263-3
	Mfr.#: IPB029N06N3 G OMO.#: OMO-IPB029N06N3-G-1190	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
	Mfr.#: IPB029N06N3G OMO.#: OMO-IPB029N06N3G-1190	Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052)
	Mfr.#: IPB029N06N3GE8187ATMA1 OMO.#: OMO-IPB029N06N3GE8187ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 120A TO263-3

IPB029N06N3GE8187ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes