VMM90-09F

VMM90-09F
Mfr. #:
VMM90-09F
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 90 Amps 900V
Lifecycle:
New from this manufacturer.
Datasheet:
VMM90-09F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
VMM90-09F DatasheetVMM90-09F Datasheet (P4)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
Discrete Semiconductor Modules
RoHS:
Y
Product:
Power Semiconductor Modules
Type:
HiPerFET
Vf - Forward Voltage:
1.1 V
Mounting Style:
Screw Mount
Package / Case:
Y3-Li
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Series:
VMM90
Packaging:
Bulk
Brand:
IXYS
Product Type:
Discrete Semiconductor Modules
Factory Pack Quantity:
2
Subcategory:
Discrete Semiconductor Modules
Unit Weight:
8 oz
Tags
VMM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N- Channel 900 V 85 A 76 mOhm Power MOSFET Module
***ical
Trans MOSFET N-CH 900V 85A 9-Pin Y3-Li
***ukat
N-Ch-Half-Bridge 900V 85A 0,076R Y3-Li
***ure Electronics
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
***ineon
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 105A 350000mW 24-Pin EconoPIM3 Tray
***ineon SCT
EconoPIM™ 3 1200V three phase PIM IGBT module with IGBT3 and NTC, AG-ECONO3-3, RoHS
***ment14 APAC
IGBT MODULE, 1200V, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:105A; Emitter Saturation Voltage Vce(on):2.3V; Power
***ark
IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ineon
EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***icontronic
Power Bipolar Transistor, 100A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
NPN 125 V 100 A Surface Mount Transistor Power Module - ISOTOP
*** Electronic Components
Bipolar Transistors - BJT NPN Power Module
***ow.cn
Trans GP BJT NPN 125V 100A 250000mW 4-Pin ISOTOP Tube
***nell
TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
***ark
BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Part # Mfg. Description Stock Price
VMM90-09F
DISTI # VMM90-09F-ND
IXYS CorporationMOSFET 2N-CH 900V 85A Y3-LI
RoHS: Compliant
Min Qty: 2
Container: Box
Temporarily Out of Stock
  • 2:$203.1900
VMM90-09F
DISTI # 747-VMM90-09F
IXYS CorporationDiscrete Semiconductor Modules 90 Amps 900V
RoHS: Compliant
32
  • 1:$203.2100
  • 5:$198.6300
  • 10:$193.3900
  • 25:$186.3700
Image Part # Description
SKY16601-555LF

Mfr.#: SKY16601-555LF

OMO.#: OMO-SKY16601-555LF

PIN Diodes .5-6.0GHz IL .1dB RL 27.5dB Pin 29dBm
STW20N90K5

Mfr.#: STW20N90K5

OMO.#: OMO-STW20N90K5

MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package
MSP432P4111IPZ

Mfr.#: MSP432P4111IPZ

OMO.#: OMO-MSP432P4111IPZ

ARM Microcontrollers - MCU ULTRA LOW POWER ARM MICRO CONTROLLER
DLPDLCR2000EVM

Mfr.#: DLPDLCR2000EVM

OMO.#: OMO-DLPDLCR2000EVM

Display Development Tools EVAL KIT DLP LIGHTCRAFTER DISPLAY 2000
ESP-WROOM-02U

Mfr.#: ESP-WROOM-02U

OMO.#: OMO-ESP-WROOM-02U

WiFi Modules (802.11) SMD MODULE,ESP8266EX 2MBITS SPI FLASH
MM035C104KCZ2A

Mfr.#: MM035C104KCZ2A

OMO.#: OMO-MM035C104KCZ2A-AVX

CAP CER 0.1UF 50V X7R 0603
INA233AIDGSR

Mfr.#: INA233AIDGSR

OMO.#: OMO-INA233AIDGSR-TEXAS-INSTRUMENTS

INA233AIDGSR
DLPDLCR2000EVM

Mfr.#: DLPDLCR2000EVM

OMO.#: OMO-DLPDLCR2000EVM-TEXAS-INSTRUMENTS

DLP LIGHTCRAFTER DISPLAY 2000 EV
MSP432P4111IPZ

Mfr.#: MSP432P4111IPZ

OMO.#: OMO-MSP432P4111IPZ-TEXAS-INSTRUMENTS

MCU 32-bit ARM Cortex M4F RISC 2MB Flash 3.3V 100-Pin LQFP Tray
2269-0

Mfr.#: 2269-0

OMO.#: OMO-2269-0-POMONA-ELECTRONICS

Conn Banana F/F 2 POS ST Panel Mount 2 Port
Availability
Stock:
12
On Order:
1995
Enter Quantity:
Current price of VMM90-09F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$203.19
$203.19
5
$198.63
$993.15
10
$193.39
$1 933.90
25
$186.37
$4 659.25
50
$182.15
$9 107.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
Top