IRFHM8363TRPBF

Mfr. #:: IRFHM8363TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFHM8363TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IRFHM8363TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PQFN-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 11 A

Rds On - Drain-Source Resistance:: 16.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.8 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 15 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.7 W

Configuration:: Dual

Packaging:: Reel

Height:: 1 mm

Length:: 3.3 mm

Transistor Type:: 2 N-Channel

Width:: 3.3 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 20 S

Fall Time:: 33 ns

Product Type:: MOSFET

Rise Time:: 94 ns

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 12 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: SP001565948

Unit Weight:: 0.001164 oz

Tags: IRFHM83, IRFHM8, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IRFHM8363TRPBF Description

***Yang: Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel

***ineon SCT: 30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package, PQFN 3.3X3.3 8L, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET

***ark: N CH MOSFET, DUAL, 30V, 10A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0163ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, N-CH, 30V, 10A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 14.9 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 94 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 19

*** Electronics: INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew

***ure Electronics: Single N-Channel 30 V 1.85 mOhm 77 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, N-Channel, 30V, 100A, 1.85 mOhmmax, 37 nC Qg, PQFN 5x6

***Yang: Trans MOSFET N-CH 30V 35A 8-Pin QFN EP T/R - Tape and Reel

***nell: MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 110W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load SyncFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***ure Electronics: Single N-Channel 30 V 2.1 mOhm 120 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

*** Source Electronics: MOSFET N-CH 30V 40A PQFN / Trans MOSFET N-CH 30V 40A 8-Pin PQFN EP T/R

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 250W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; ORing; Point of Load SyncFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

*** Source Electronics: Trans MOSFET N-CH 30V 21A 8-Pin QFN EP T/R / MOSFET N CH 30V 21A PQFN5X6

***ark: T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ure Electronics: Single N-Channel 25 V 1.75 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 25V 45A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 45A PQFN

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0015ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; MultiPhase SyncFET; ORing; Point of Load SyncFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***roFlash: Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET¬Æ Power Mosfet - PQFN 5 x 6 mm

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ark: T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6

***Yang: Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 82A, 4.2 MOHM MAX, 15 NC QG, LOW RG, PQFN 5X6

***et: Trans MOSFET N-CH 30V 23A 8-Pin QFN EP T/R

***ark: N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8

*** Electronic Components: RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 4.2mOhms 15nC

IRFHM8363TRPBF More Information

Dual PQFN HEXFET® Power MOSFETs: Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRFHM8363TRPBF DISTI # V72:2272_13890764	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R	4000	3000:$0.2839 1000:$0.3297 500:$0.3973 250:$0.4017 100:$0.4061 25:$0.5674 10:$0.5745 1:$0.6622
IRFHM8363TRPBF DISTI # IRFHM8363TRPBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 11A 8PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call	4000:$0.3850
IRFHM8363TRPBF DISTI # 30331789	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R	4000	3000:$0.2839 1000:$0.3297 500:$0.3973 250:$0.4017 100:$0.4061 26:$0.5674
IRFHM8363TRPBF DISTI # 30327790	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R	4000	24000:$0.2954 8000:$0.3135 4000:$0.3145
IRFHM8363TRPBF DISTI # IRFHM8363TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: IRFHM8363TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRFHM8363TRPBF DISTI # IRFHM8363TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R - Tape and Reel (Alt: IRFHM8363TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2879 8000:$0.2769 16000:$0.2669 24000:$0.2579 40000:$0.2539
IRFHM8363TRPBF DISTI # SP001565948	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: SP001565948) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.4219 8000:€0.3449 16000:€0.3159 24000:€0.2919 40000:€0.2709
IRFHM8363TRPBF DISTI # 05W5523	Infineon Technologies AG	MOSFET Transistor, Dual N Channel, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V , RoHS Compliant: Yes	966	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750
IRFHM8363TRPBF DISTI # 942-IRFHM8363TRPBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC RoHS: Compliant	3630	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 4000:$0.3330 8000:$0.3210 24000:$0.3100
IRFH8363TRPBF DISTI # IRFHM8363TRPBF	Infineon Technologies AG	Transistor: N-MOSFET x2,unipolar,30V,11A,2.7W,PQFN3.3X3.3	2922	1:$0.6700 3:$0.5900 10:$0.5300 100:$0.4900
IRFHM8363TRPBF DISTI # 2114658	Infineon Technologies AG	MOSFET, DUAL, N-CH, 30V, 10A, PQFN RoHS: Compliant	1224	1:$1.4200
IRFHM8363TRPBF DISTI # 2114658	Infineon Technologies AG	MOSFET, DUAL, N-CH, 30V, 10A, PQFN RoHS: Compliant	1611	5:£0.7520 25:£0.6480 100:£0.4880 250:£0.4610 500:£0.4320
IRFHM8363TRPBF DISTI # C1S322000576751	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant	4000	250:$0.4017 100:$0.4061 25:$0.5674 10:$0.5745
IRFHM8363TRPBF DISTI # C1S322000579776	Infineon Technologies AG	Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R RoHS: Compliant	4000	4000:$0.4590

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IRFHM8363TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes