SI2356DS-T1-GE3

Name: Vishay - SI2356DS-T1-GE3
Brand: Vishay
SKU: OMO-2860839
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI2356DS-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 40V 4.3A SOT-23
Lifecycle:: New from this manufacturer.
Datasheet:: SI2356DS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI2356DS-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Unit-Weight: 0.050717 oz

Mounting-Style: SMD/SMT

Tradename: TrenchFET

Package-Case: TO-236-3, SC-59, SOT-23-3

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: TO-236

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 1.7W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 40V

Input-Capacitance-Ciss-Vds: 370pF @ 20V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 4.3A (Tc)

Rds-On-Max-Id-Vgs: 51 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Charge-Qg-Vgs: 13nC @ 10V

Pd-Power-Dissipation: 1.7 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 53 ns

Rise-Time: 52 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 4.3 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 56 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 18 ns

Typical-Turn-On-Delay-Time: 10 ns

Qg-Gate-Charge: 8.1 nC

Forward-Transconductance-Min: 13 S

Tags: SI235, SI23, SI2

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SI2356DS-T1-GE3 Description

***ure Electronics: Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R

***ark: N-Ch MOSFET SOT-23 copper 40V 51mohm @ 10V

***et: N-CH MOSFET SOT-23 COPPER 40V 51MOHM @ 10V

***i-Key: MOSFET N-CH 40V 4.3A SOT-23

***ronik: N-CHANNEL-FET 4,3A 40V SOT23

***ied Electronics & Automation: 40V .051ohm@10V 4.3A N-Ch T-FET

***: P-CHANNEL 40-V (D-S)

***ment14 APAC: MOSFET, N-CH, 40V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)

***nell: MOSFET, N-CH, 40V, 4.3A, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4.3A; Napięcie drenu / źródła Vds:40V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.5V; Straty mocy Pd:1.7W; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (20-Jun-2016)

SI2356DS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2356DS-T1-GE3 DISTI # V72:2272_09216727	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	2757	1000:$0.1356 500:$0.1789 250:$0.2021 100:$0.2246 25:$0.3306 10:$0.3674 1:$0.5266
SI2356DS-T1-GE3 DISTI # V36:1790_09216727	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	87569In Stock	1000:$0.1289 500:$0.1718 100:$0.2291 10:$0.3370 1:$0.4200
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	87569In Stock	1000:$0.1289 500:$0.1718 100:$0.2291 10:$0.3370 1:$0.4200
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 4.3A SOT-23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	87000In Stock	75000:$0.0890 30000:$0.0925 15000:$0.1008 6000:$0.1077 3000:$0.1147
SI2356DS-T1-GE3 DISTI # 32318889	Vishay Intertechnologies	Trans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R RoHS: Compliant	2757	76:$0.5266
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2356DS-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 6000	1500:$0.0988 750:$0.1018 375:$0.1051 188:$0.1085 94:$0.1122 47:$0.1161 1:$0.1204
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	30000:€0.0859 18000:€0.0929 12000:€0.0999 6000:€0.1169 3000:€0.1709
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
SI2356DS-T1-GE3 DISTI # SI2356DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0839 18000:$0.0869 12000:$0.0889 6000:$0.0929 3000:$0.0959
SI2356DS-T1-GE3 DISTI # 05AC9483	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes	27000	1:$0.1370 3000:$0.1370
SI2356DS-T1-GE3 DISTI # 01AC4982	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes	8890	1000:$0.1550 500:$0.1960 250:$0.2340 100:$0.2720 50:$0.3280 25:$0.3830 1:$0.4810
SI2356DS-T1-GE3 DISTI # 70459514	Vishay Siliconix	40V .051ohm@10V 4.3A N-Ch T-FET RoHS: Compliant	0	25:$0.1880 250:$0.1790 500:$0.1700 750:$0.1610 1000:$0.1340
SI2356DS-T1-GE3 DISTI # 78-SI2356DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant	76574	1:$0.4300 10:$0.2930 100:$0.1970 500:$0.1580 1000:$0.1190 3000:$0.1090 6000:$0.1020 9000:$0.0950 24000:$0.0880
SI2356DS-T1-GE3 DISTI # TMOSS6841	Vishay Intertechnologies	N-CHANNEL-FET 4,3A 40V SOT23 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.1301 6000:$0.1226 12000:$0.1152 18000:$0.1041 24000:$0.1003
SI2356DS-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 12V Vgs SOT-23 RoHS: Compliant	Americas - 54000
SI2356DS-T1-GE3 DISTI # 2679679	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23	15000	9000:£0.0763 3000:£0.0889
SI2356DS-T1-GE3 DISTI # 2679679	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23 RoHS: Compliant	15000	12000:$0.1260 9000:$0.1300 6000:$0.1310 3000:$0.1350
SI2356DS-T1-GE3 DISTI # 2646369	Vishay Intertechnologies	MOSFET, N-CH, 40V, 4.3A, SOT-23 RoHS: Compliant	8230	1000:$0.1950 500:$0.2590 100:$0.3460 10:$0.5080 1:$0.6300

SI2356DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes