FDP6035L

FDP6035L
Mfr. #:
FDP6035L
Manufacturer:
Rochester Electronics, LLC
Description:
MOSFET N-Ch PowerTrench Logic
Lifecycle:
New from this manufacturer.
Datasheet:
FDP6035L Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
FAIRCHILD
Product Category
IC Chips
Tags
FDP6035, FDP603, FDP60, FDP6, FDP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET N-Ch PowerTrench Logic
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
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***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
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MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation P
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***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TO220-3, RoHS
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
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***nell
MOSFET, N-CH, 100V, 58A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 58 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.6 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 94
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET
***ical
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***ark
Mosfet, N Channel, 60V, 60A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:-Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part # Mfg. Description Stock Price
FDP6035L
DISTI # 512-FDP6035L
ON SemiconductorMOSFET N-Ch PowerTrench Logic
RoHS: Not compliant
0
    FDP6035LFairchild Semiconductor CorporationPower Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    3250
    • 1000:$0.7400
    • 500:$0.7800
    • 100:$0.8100
    • 25:$0.8400
    • 1:$0.9100
    FDP6035LFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-220AB10035
    • 1450:$0.6300
    • 801:$0.6900
    • 1:$1.8000
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    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of FDP6035L is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.00
    $0.00
    10
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    $0.00
    100
    $0.00
    $0.00
    500
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    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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