FDP6670AL

FDP6670AL
Mfr. #:
FDP6670AL
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET N-Ch PowerTrench Logic Level
Lifecycle:
New from this manufacturer.
Datasheet:
FDP6670AL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDP6670AL DatasheetFDP6670AL Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
6.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
68 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
16.3 mm
Length:
10.67 mm
Series:
FDP6670AL
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
4.7 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
115 S
Fall Time:
15 ns
Product Type:
MOSFET
Rise Time:
13 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
FDP6670AL_NL
Unit Weight:
0.063493 oz
Tags
FDP6670, FDP667, FDP66, FDP6, FDP
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ark
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***emi
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***ure Electronics
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Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ure Electronics
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***ineon SCT
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***Yang
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***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 75 W
***nell
MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 75W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 92A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V
***emi
Power MOSFET 90 Amps, 24 Volts
***ser
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***r Electronics
Power Field-Effect Transistor, 90A I(D), 24V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ser
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***i-Key
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*** Electronics
N-CHANNEL POWER MOSFET
Part # Mfg. Description Stock Price
FDP6670AL
DISTI # FDP6670AL-ND
ON SemiconductorMOSFET N-CH 30V 80A TO-220
RoHS: Compliant
Min Qty: 800
Container: Tube
Limited Supply - Call
    FDP6670AL
    DISTI # 38C7148
    ON SemiconductorN CHANNEL MOSFET, 30V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,MSL:- RoHS Compliant: Yes0
      FDP6670AL
      DISTI # 512-FDP6670AL
      ON SemiconductorMOSFET N-Ch PowerTrench Logic Level
      RoHS: Compliant
      0
        FDP6670AL_Q
        DISTI # 512-FDP6670AL_Q
        ON SemiconductorMOSFET N-Ch PowerTrench Logic Level
        RoHS: Not compliant
        0
          FDP6670ALFairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant
          26896
          • 1000:$0.5500
          • 500:$0.5800
          • 100:$0.6100
          • 25:$0.6300
          • 1:$0.6800
          FDP6670ALFairchild Semiconductor Corporation 1202
            FDP6670ALFairchild Semiconductor Corporation80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB385
            • 77:$0.4620
            • 16:$0.6600
            • 1:$1.3200
            FDP6670ALFairchild Semiconductor Corporation80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB14
            • 4:$1.3200
            • 1:$1.6500
            FDP6670ALUnknown80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB2444
            • 1113:$1.6350
            • 497:$1.7985
            • 1:$3.2700
            FDP6670ALFairchild Semiconductor Corporation 18
              FDP6670ALFairchild Semiconductor Corporation 855
                FDP6670ALFairchild Semiconductor Corporation 50
                  FDP6670AL
                  DISTI # 1467978
                  ON SemiconductorMOSFET, N, 3-TO-220
                  RoHS: Compliant
                  0
                  • 1000:$1.9100
                  • 500:$2.1800
                  • 250:$2.4800
                  • 100:$2.7000
                  • 25:$2.9700
                  • 1:$3.1600
                  Image Part # Description
                  FDP6670AL

                  Mfr.#: FDP6670AL

                  OMO.#: OMO-FDP6670AL

                  MOSFET N-Ch PowerTrench Logic Level
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                  Mfr.#: FDP6021P

                  OMO.#: OMO-FDP6021P-1190

                  28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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                  Mfr.#: FDP6030L

                  OMO.#: OMO-FDP6030L-ON-SEMICONDUCTOR

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                  FDP6035AL-NL

                  Mfr.#: FDP6035AL-NL

                  OMO.#: OMO-FDP6035AL-NL-1190

                  New and Original
                  FDP6035L

                  Mfr.#: FDP6035L

                  OMO.#: OMO-FDP6035L-1190

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                  FDP6390

                  Mfr.#: FDP6390

                  OMO.#: OMO-FDP6390-1190

                  New and Original
                  FDP6603AL

                  Mfr.#: FDP6603AL

                  OMO.#: OMO-FDP6603AL-1190

                  New and Original
                  FDP6644

                  Mfr.#: FDP6644

                  OMO.#: OMO-FDP6644-1190

                  55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
                  FDP6670ALNL

                  Mfr.#: FDP6670ALNL

                  OMO.#: OMO-FDP6670ALNL-1190

                  New and Original
                  FDP6676S

                  Mfr.#: FDP6676S

                  OMO.#: OMO-FDP6676S-1190

                  MOSFET 30V N-Ch PowerTrench
                  Availability
                  Stock:
                  Available
                  On Order:
                  4500
                  Enter Quantity:
                  Current price of FDP6670AL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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