IRF8313PBF

Mfr. #:: IRF8313PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF8313PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF8313PBF Datasheet IRF8313PBF Datasheet (P4-P6)IRF8313PBF Datasheet (P7-P9)IRF8313PBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 9.7 A

Rds On - Drain-Source Resistance:: 21.6 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 6 nC

Pd - Power Dissipation:: 2 W

Configuration:: Dual

Packaging:: Tube

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 2 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 95

Subcategory:: MOSFETs

Part # Aliases:: SP001570694

Unit Weight:: 0.019048 oz

Tags: IRF8313, IRF831, IRF83, IRF8, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8313PBF Description

***ure Electronics: Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8

***ark: Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V

***ment14 APAC: MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

Market price

Part #	Mfg.	Description	Stock	Price
IRF8313PBF DISTI # V99:2348_13891188	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube RoHS: Compliant	182	1:$0.2929
IRF8313PBF DISTI # IRF8313PBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 9.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF8313PBF.. DISTI # 30728279	Infineon Technologies AG	IRF8313PBF..	735	260:$0.2969
IRF8313PBF DISTI # 26198223	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube RoHS: Compliant	182	25:$0.2929
IRF8313PBF DISTI # IRF8313PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF) RoHS: Compliant Min Qty: 3800 Container: Tube	Americas - 4924
IRF8313PBF.. DISTI # 10R3491	Infineon Technologies AG	DUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V	735	1:$0.1930 10:$0.1930 100:$0.1930 500:$0.1930 1000:$0.1930 2500:$0.1930 10000:$0.1930
IRF8313PBF DISTI # 942-IRF8313PBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC RoHS: Compliant	0
IRF8313PBF	Infineon Technologies AG	Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	1439	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
IRF8313PBF	International Rectifier	Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	5182	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
IRF8313TRPBF DISTI # IRF8313PBF-GURT	Infineon Technologies AG	2xN-Ch 30V 9,7A 2,0W 0,0155R SO8 RoHS: Compliant	2600	50:€0.2460 100:€0.2060 500:€0.1860 2000:€0.1790
IRF8313PBF DISTI # C1S327400167723	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube RoHS: Compliant	123	50:$0.2240 10:$0.3250

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On Order:: 2500
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IRF8313PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes