BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 2N-CH 1200V 120A MODULE
Lifecycle:
New from this manufacturer.
Datasheet:
BSM120D12P2C005 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSM120D12P2C005 more Information
Product Attribute
Attribute Value
Manufacturer
Rohm Semiconductor
Product Category
FETs - Arrays
Series
BSM120D12P2C005
Product
Power Semiconductor Modules
Type
SiC Power Module
Packaging
Bulk
Mounting-Style
Screw
Operating-Temperature-Range
- 40 C to + 150 C
Package-Case
Module
Operating-Temperature
-40°C ~ 150°C (TJ)
Mounting-Type
*
Supplier-Device-Package
Module
Configuration
Half-Bridge
FET-Type
2 N-Channel (Half Bridge)
Power-Max
780W
Drain-to-Source-Voltage-Vdss
1200V (1.2kV)
Input-Capacitance-Ciss-Vds
14000pF @ 10V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
120A
Rds-On-Max-Id-Vgs
-
Vgs-th-Max-Id
2.7V @ 22mA
Gate-Charge-Qg-Vgs
-
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Part # Mfg. Description Stock Price
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND
ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005
ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk
Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005
ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant
0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472
ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant
0
  • 1:£371.0000
  • 5:£307.0000
Image Part # Description
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005

Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
BSM120D12P2C005

Mfr.#: BSM120D12P2C005

OMO.#: OMO-BSM120D12P2C005-ROHM-SEMI

MOSFET 2N-CH 1200V 120A MODULE
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of BSM120D12P2C005 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$472.04
$472.04
10
$448.43
$4 484.33
100
$424.83
$42 483.15
500
$401.23
$200 614.90
1000
$377.63
$377 628.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
  • A6211 LED Driver
    Allegro's A6211 device integrates a high-side N-channel MOSFET switch for DC-to-DC stepdown (buck) conversion with a wide input supply voltage from 6 to 48 V.
  • WP-SMRT REDCUBE SMT Terminal
    Wurth Electronics' REDCUBE portfolio has been extended with a reverse-type surface-mount terminal with internal through-hole.
  • JCH Series DC-DC Converters
    XP Power's JCH Series of DC-DC Converters are aimed for a broad range of telecom, networking, and industrial applications.
  • Compare BSM120D12P2C005
    BSM100D12P1C004 vs BSM100GA120D vs BSM100GA120DN2
  • DDR3 SDRAM with ECC
    ISSI offers its IS46TR16640ED, 1-Gbit DDR3 DRAMs that has an embedded error correcting code (ECC), which detects and corrects bit errors on-the-fly.
  • SCALE-iDriver™ Gate Driver ICs
    Power Integrations' SCALE-iDriver family of gate driver ICs are single-channel IGBT and MOSFET drivers in a standard eSOP package.
Top