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IXYH40N120C3D1

IXYH40N120C3D1
Mfr. #:
IXYH40N120C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
IXYH40N120C3D1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH40N120C3D1 DatasheetIXYH40N120C3D1 Datasheet (P4-P6)IXYH40N120C3D1 Datasheet (P7)
ECAD Model:
More Information:
IXYH40N120C3D1 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
Technology:
Si
Package / Case:
TO-247AD-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
4.8 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
64 A
Pd - Power Dissipation:
480 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
IXYH40N120
Packaging:
Tube
Continuous Collector Current Ic Max:
64 A
Brand:
IXYS
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Tradename:
XPT
Unit Weight:
1.340411 oz
Tags
IXYH40N1, IXYH4, IXYH, IXY
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ure Electronics
IXYH30N120C3 - 1200 V 66 A High Speed XPT GenX3 IGBT Flange Mount - TO-247
***ical
Trans IGBT Chip N-CH 1.2KV 75A Automotive 3-Pin(3+Tab) TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W
***nell
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ical
Trans IGBT Chip N=-CH 1200V 64A 417000mW 3-Pin(3+Tab) TO-247AB Tube
***ark
Igbt, 1.2Kv, 64A, 150Deg C, 417W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXYH40N120C3D1
DISTI # IXYH40N120C3D1-ND		IXYS CorporationIGBT 1200V 64A 480W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		51In Stock
  • 510:$7.6981
  • 270:$8.4430
  • 120:$9.1880
  • 30:$10.1813
  • 10:$11.1750
  • 1:$12.4200
IXYH40N120C3D1
DISTI # 747-IXYH40N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT60
  • 1:$12.4100
  • 10:$11.1800
  • 25:$10.1800
  • 50:$9.3000
  • 100:$9.1900
  • 250:$8.3700
  • 500:$7.7000
  • 1000:$6.7100
IXYH40N120C3D1
DISTI # IXYH40N120C3D1		IXYS Corporation1200V 64A 480W TO247AD
RoHS: Compliant		17
  • 1:€10.1500
  • 5:€7.1500
  • 30:€6.1500
  • 60:€5.9500
IXYH40N120C3D1
DISTI # XSFP00000012546		IXYS CorporationPower Field-Effect Transistor,3.6AI(D),40V,0.056ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB
RoHS: Compliant		1822
  • 30:$11.8900
  • 1822:$11.1500
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Availability
Stock:
35
On Order:
2018
Enter Quantity:
Current price of IXYH40N120C3D1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$12.41
$12.41
10
$11.18
$111.80
25
$10.18
$254.50
50
$9.30
$465.00
100
$9.19
$919.00
250
$8.37
$2 092.50
500
$7.70
$3 850.00
1000
$6.71
$6 710.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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