AUIRL1404ZSTRL

AUIRL1404ZSTRL
Mfr. #:
AUIRL1404ZSTRL
Manufacturer:
Infineon Technologies
Description:
MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
Lifecycle:
New from this manufacturer.
Datasheet:
AUIRL1404ZSTRL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
5.9 mOhms
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
75 nC
Minimum Operating Temperature:
- 55 C
Pd - Power Dissipation:
200 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Fall Time:
49 ns
Product Type:
MOSFET
Rise Time:
180 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
19 ns
Part # Aliases:
SP001518266
Unit Weight:
0.139332 oz
Tags
AUIRL1404ZST, AUIRL1404ZS, AUIRL1404Z, AUIRL1, AUIRL, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
AUIRL1404ZS N-channel MOSFET Transistor; 180 A; 40 V; 4-Pin D2PAK
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.1pF 50Volts C0G +/-0.1pF
***ark
MOSFET,W DIODE,N CH,40V,160A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating ;RoHS Compliant: Yes
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 40V, 120A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 208 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 68 / Rise Time ns = 68 / Turn-OFF Delay Time ns = 115 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 208
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 140 nC HEXFET® Power Mosfet - TO-262-3
***nell
MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power D
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
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Trans MOSFET N-CH Si 40V 193A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 40 V 2.3 mOhm 107 nC Automotive HEXFET® Power Mosfet - D2PAK
***nell
MOSFET, 40V, 120A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package
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***ow.cn
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***ure Electronics
Single P-Channel 40 V 4 mOhm 375 W SMT Automotive Power Mosfet - TO-263
***ark
P-Channel 40-V (D-S) 175C Mosfet Rohs Compliant: Yes
***ment14 APAC
MOSFET, P-CH, 40V, 120A, 175DEG C, 375W;
***S
MOSFET P-CHANNEL 40V 120V TO-263
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 40V 120A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 40V, 120A, H2PAK-6, Tape and Reel
***icroelectronics
N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package
***ca Corp
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 40V 120A 3-Pin H2PAK-2 T/R
***(Formerly Allied Electronics)
MOSFET 40V 0.032 / 0.046 OHM LL
***icroelectronics SCT
Power MOSFETs, 40V, 160A, H2PAK-2, Tape and Reel
***S
French Electronic Distributor since 1988
Part # Mfg. Description Stock Price
AUIRL1404ZSTRL
DISTI # AUIRL1404ZSTRL-ND
Infineon Technologies AGMOSFET N-CH 40V 160A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$1.9813
AUIRL1404ZSTRL
DISTI # AUIRL1404ZSTRL
Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRL1404ZSTRL)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.6900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
AUIRL1404ZSTRL
DISTI # SP001518266
Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001518266)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.5900
  • 1600:€1.5900
  • 3200:€1.4900
  • 4800:€1.3900
  • 8000:€1.2900
AUIRL1404ZSTRL
DISTI # 942-AUIRL1404ZSTRL
Infineon Technologies AGMOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
RoHS: Compliant
0
  • 1:$3.1800
  • 10:$2.7100
  • 100:$2.3500
  • 250:$2.2300
  • 500:$2.0000
  • 800:$1.6900
  • 2400:$1.6000
  • 4800:$1.5400
Image Part # Description
AUIRL1404Z

Mfr.#: AUIRL1404Z

OMO.#: OMO-AUIRL1404Z

MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404ZSTRL

Mfr.#: AUIRL1404ZSTRL

OMO.#: OMO-AUIRL1404ZSTRL

MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404S

Mfr.#: AUIRL1404S

OMO.#: OMO-AUIRL1404S

MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404Z

Mfr.#: AUIRL1404Z

OMO.#: OMO-AUIRL1404Z-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404S

Mfr.#: AUIRL1404S

OMO.#: OMO-AUIRL1404S-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404ZS

Mfr.#: AUIRL1404ZS

OMO.#: OMO-AUIRL1404ZS-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404STRL

Mfr.#: AUIRL1404STRL

OMO.#: OMO-AUIRL1404STRL-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 160A D2PAK
AUIRL1404ZSTRLPBF

Mfr.#: AUIRL1404ZSTRLPBF

OMO.#: OMO-AUIRL1404ZSTRLPBF-1190

New and Original
AUIRL1404ZL

Mfr.#: AUIRL1404ZL

OMO.#: OMO-AUIRL1404ZL-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 160A TO262
AUIRL1404ZSTRL

Mfr.#: AUIRL1404ZSTRL

OMO.#: OMO-AUIRL1404ZSTRL-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 160A D2PAK
Availability
Stock:
800
On Order:
2783
Enter Quantity:
Current price of AUIRL1404ZSTRL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.18
$3.18
10
$2.71
$27.10
100
$2.35
$235.00
250
$2.23
$557.50
500
$2.00
$1 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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