2N3505 PBFREE

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-18-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.4 V

Gain Bandwidth Product fT:

200 MHz

Series:

2N35

DC Current Gain hFE Max:

300 at 150 mA, 10 V

Packaging:

Bulk

Brand:

Central Semiconductor

Continuous Collector Current:

150 mA

DC Collector/Base Gain hfe Min:

100 at 150 mA, 10 V

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Tags

2N350, 2N35, 2N3