NGTB60N65FL2WG

Mfr. #:: NGTB60N65FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 650V/60A FAST IGBT FSII
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB60N65FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB60N65FL2WG Datasheet NGTB60N65FL2WG Datasheet (P4-P6)NGTB60N65FL2WG Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.64 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 100 A

Pd - Power Dissipation:: 595 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 0.395068 oz

Tags: NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB60N65FL2WG Description

***ical: Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB60N Series 650 V 100 A Through Hole Silicon IGBT - TO-247-3

*** Stop Electro: Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247

***emi: IGBT, 650V 60A Field Stop 2 IGBT

***nell: IGBT, SINGLE, N-CH, 650V, 100A, TO-247-3;

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, S series 1200 V, 40 A low drop

***nell: IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Market price

Part #	Mfg.	Description	Stock	Price
NGTB60N65FL2WG DISTI # V99:2348_14671478	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	30	1000:$6.5700 500:$7.1860 250:$8.0900 100:$8.4179 25:$9.7300 10:$10.2040 1:$11.2780
NGTB60N65FL2WG DISTI # V36:1790_14671478	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
NGTB60N65FL2WG DISTI # NGTB60N65FL2WGOS-ND	ON Semiconductor	650V/60A IGBT FSII RoHS: Compliant Min Qty: 1 Container: Tube	121In Stock	5010:$1.1922 2520:$1.2071 510:$1.5648 120:$1.9046 30:$2.2353 10:$2.3700 1:$2.6400
NGTB60N65FL2WG DISTI # 31577063	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	120	120:$6.9179
NGTB60N65FL2WG DISTI # 25891541	ON Semiconductor	Trans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	30	1:$11.2780
NGTB60N65FL2WG DISTI # NGTB60N65FL2WG	ON Semiconductor	(Alt: NGTB60N65FL2WG) RoHS: Compliant Min Qty: 90	Asia - 450	4500:$7.9500 2250:$8.0847 900:$8.2241 450:$8.5179 270:$8.8333 180:$9.1731 90:$9.5400
NGTB60N65FL2WG DISTI # NGTB60N65FL2WG	ON Semiconductor	- Bulk (Alt: NGTB60N65FL2WG) Min Qty: 48 Container: Bulk	Americas - 0	480:$6.4900 144:$6.6900 240:$6.6900 96:$6.7900 48:$6.8900
NGTB60N65FL2WG DISTI # NGTB60N65FL2WG	ON Semiconductor	- Rail/Tube (Alt: NGTB60N65FL2WG) RoHS: Compliant Min Qty: 120 Container: Tube	Americas - 0	1200:$1.0509 600:$1.0769 360:$1.0909 240:$1.1049 120:$1.1129
NGTB60N65FL2WG DISTI # NGTB60N65FL2WG	ON Semiconductor	(Alt: NGTB60N65FL2WG) RoHS: Compliant Min Qty: 1	Europe - 0	250:€5.4600 100:€7.2000 50:€7.7500 10:€8.2900 5:€8.9600 1:€9.6200
NGTB60N65FL2WG DISTI # 81Y3910	ON Semiconductor	650V/60A FAST IGBT FSII T / TUBE	0	500:$6.2100 250:$6.4000 100:$7.6400 50:$8.2100 25:$8.7800 10:$9.6400 1:$10.7400
NGTB60N65FL2WG. DISTI # 29AC8931	ON Semiconductor	DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.64V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	1200:$5.7900 600:$5.9900 240:$6.0900 1:$6.1900
NGTB60N65FL2WG DISTI # 863-NGTB60N65FL2WG	ON Semiconductor	IGBT Transistors 650V/60A FAST IGBT FSII RoHS: Compliant	240	1:$11.3400 10:$10.2500 25:$9.7700 100:$8.4900 250:$8.1100 500:$7.3900 1000:$6.4400
NGTB60N65FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	240	1000:$1.2500 500:$1.3200 100:$1.3700 25:$1.4300 1:$1.5400
NGTB60N65FL2WG DISTI # 1217872P	ON Semiconductor	TRANSISTOR IGBT N-CH 650V 60A TO247, TU	150	2000:£5.7300 1000:£5.8700 100:£6.9600 10:£7.8600
NGTB60N65FL2WG DISTI # 2563378	ON Semiconductor	IGBT, SINGLE, N-CH, 650V, 100A, TO-247-3	4	100:£6.4700 50:£6.9600 10:£7.4500 5:£8.6500 1:£9.2000
NGTB60N65FL2WG	ON Semiconductor	650V,60A,IGBT	120	1:$17.3600 100:$11.0800 500:$9.1400 1000:$8.4000
NGTB60N65FL2WG DISTI # 2563378	ON Semiconductor	IGBT, SINGLE, N-CH, 650V, 100A, TO-247-3 RoHS: Compliant	4	1000:$9.7100 500:$11.1400 250:$12.2200 100:$12.7900 25:$14.7200 10:$15.4500 1:$17.0900

NGTB60N65FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes