NGTB60N65FL2WG

NGTB60N65FL2WG
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7
TYPICAL CHARACTERISTICS
Figure 23. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.0001
1
SQUARE−WAVE PEAK R(t) (°C/W)
0.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.282
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(°C/W) C
i
(J/°C)
0.0270 0.0037
0.0243
0.0225
0.0554
0.1121
0.0409
0.0130
0.0445
0.0571
0.0892
0.7725
0.000001
Figure 24. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
1
R
q
JC
= 0.622
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
10.10.010.00010.000001 0.00001 0.001
R
i
(°C/W) C
i
(J/°C)
0.0001560.006394
0.1
0.01
0.001
0.007900
0.008527
0.025491
0.022800
0.121738
0.363338
0.001266
0.003708
0.003923
0.013870
0.008214
0.275226
NGTB60N65FL2WG
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8
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010)
M
YQ
S
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025)
M
TB
M
−Q−
L
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 20.32 21.08 0.800 8.30
B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
D 1.00 1.40 0.040 0.055
E 1.90 2.60 0.075 0.102
F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
J 0.40 0.80 0.016 0.031
K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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NGTB60N65FL2WG

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IGBT Transistors 650V/60A FAST IGBT FSII
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