IRFL024ZPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

5.1 A

Rds On - Drain-Source Resistance:

57.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

9.1 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.8 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

1.6 mm

Length:

6.5 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

3.5 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

6.2 S

Fall Time:

23 ns

Product Type:

MOSFET

Rise Time:

21 ns

Factory Pack Quantity:

80

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

7.8 ns

Part # Aliases:

SP001554888

Unit Weight:

0.003951 oz

Tags

IRFL024Z, IRFL02, IRFL0, IRFL, IRF