IRFL024Z

IRFL024ZTRPBF vs IRFL024ZPBF vs IRFL024Z

 
PartNumberIRFL024ZTRPBFIRFL024ZPBFIRFL024Z
DescriptionMOSFET MOSFT 55V 5.1A 57.5mOhm 9.1nCMOSFET 55V 1 N-CH HEXFET 5.1mOhms 9.1nCMOSFET N-CH 55V 5.1A SOT223
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current5.1 A5.1 A-
Rds On Drain Source Resistance57.5 mOhms57.5 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Qg Gate Charge14 nC9.1 nC-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.8 W2.8 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height1.6 mm1.6 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width3.5 mm3.5 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min6.2 S6.2 S-
Fall Time23 ns23 ns-
Product TypeMOSFETMOSFET-
Rise Time21 ns21 ns-
Factory Pack Quantity250080-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001560488SP001554888-
Unit Weight0.003951 oz0.003951 oz-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Typical Turn Off Delay Time-30 ns-
Typical Turn On Delay Time-7.8 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFL024ZTRPBF MOSFET MOSFT 55V 5.1A 57.5mOhm 9.1nC
IRFL024ZPBF MOSFET N-CH 55V 5.1A SOT223
IRFL024Z MOSFET N-CH 55V 5.1A SOT223
IRFL024ZTRPBF MOSFET N-CH 55V 5.1A SOT223
Infineon / IR
Infineon / IR
IRFL024ZPBF MOSFET 55V 1 N-CH HEXFET 5.1mOhms 9.1nC
IRFL024ZTRPBF-CUT TAPE New and Original
IRFL024ZTRPBF. New and Original
IRFL024Z FL024Z New and Original
IRFL024ZTRPBF,IRFL024ZTR New and Original
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