SI4427BDY-T1-GE3

Mfr. #:: SI4427BDY-T1-GE3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
Lifecycle:: New from this manufacturer.
Datasheet:: SI4427BDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI4427BDY-T1-GE3 more Information

Product Attribute
Attribute Value

Tags: SI4427BDY-T, SI4427B, SI4427, SI442, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4427BDY-T1-GE3 Description

***ure Electronics: Single P-Channel 30 V 0.0195 Ohm 70 nC 1.5 W Silicon SMT Mosfet - SOIC-8

***et: Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R

***ment14 APAC: P CHANNEL MOSFET, -30V, 12.6A, SOIC

***ark: Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-12.6A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:-2.5V; Threshold Voltage, Vgs Typ:-1.4V ;RoHS Compliant: Yes

SI4427BDY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4427BDY-T1-GE3 DISTI # V72:2272_09216487	Vishay Intertechnologies	Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant	4882	3000:$0.6284 1000:$0.6719 500:$0.8261 250:$0.9439 100:$0.9542 25:$1.1855 10:$1.1996 1:$1.4064
SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 9.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4985In Stock	1000:$0.9693 500:$1.1698 100:$1.5041 10:$1.8720 1:$2.0700
SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 9.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4985In Stock	1000:$0.9693 500:$1.1698 100:$1.5041 10:$1.8720 1:$2.0700
SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 9.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.8761
SI4427BDY-T1-GE3 DISTI # 27510656	Vishay Intertechnologies	Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant	4882	3000:$0.6284 1000:$0.6719 500:$0.8261 250:$0.9439 100:$0.9542 25:$1.1855 10:$1.1996
SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4427BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.7159 5000:$0.6949 10000:$0.6659 15000:$0.6479 25000:$0.6309
SI4427BDY-T1-GE3 DISTI # 15R5013	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-12.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-2.5V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.8090 2500:$0.8030 5000:$0.7790 10000:$0.7500
SI4427BDY-T1-GE3 DISTI # 26R1876	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 12.6A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes	0	1:$1.7300 10:$1.4200 25:$1.3100 50:$1.2000 100:$1.0900 250:$1.0100 500:$0.9360
SI4427BDY-T1-GE3 DISTI # 781-SI4427BDY-GE3	Vishay Intertechnologies	MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V RoHS: Compliant	1466	1:$1.7300 10:$1.4200 100:$1.0900 500:$0.9360 1000:$0.7390 2500:$0.6900
SI4427BDY-T1-GE3. DISTI # 2118917	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 12.6A, SOIC RoHS: Compliant	0	2500:£0.8220
SI4427BDY-T1-GE3 DISTI # C1S803601998828	Vishay Intertechnologies	Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant	4882	250:$0.8580 100:$0.9534 25:$1.0778 10:$1.1975
SI4427BDY-T1-GE3.. DISTI # 8156751	Vishay Intertechnologies	RoHS: Compliant	0	1:$2.7500 10:$2.2500 100:$1.7300 500:$1.4900 1000:$1.1700 2500:$1.1000

Image	Part #	Description
	Mfr.#: SI4427BDY-T1-E3 OMO.#: OMO-SI4427BDY-T1-E3	MOSFET 30V 13.3A 3W
	Mfr.#: SI4427BDY-T1-GE3 OMO.#: OMO-SI4427BDY-T1-GE3	MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
	Mfr.#: SI4427BDY-T1-GE3 OMO.#: OMO-SI4427BDY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
	Mfr.#: SI4427BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4427BDY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4427BDY OMO.#: OMO-SI4427BDY-1190	New and Original
	Mfr.#: SI4427BDY-T1-E3 OMO.#: OMO-SI4427BDY-T1-E3-VISHAY	MOSFET P-CH 30V 9.7A 8-SOIC

SI4427BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes