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IPI052NE7N3 G

IPI052NE7N3 G
Mfr. #:
IPI052NE7N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI052NE7N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
5.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
51 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
150 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Tube
Height:
9.45 mm
Length:
10.2 mm
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Infineon Technologies
Fall Time:
8 nS
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 nS
Part # Aliases:
IPI052NE7N3GAKSA1 SP000657442
Unit Weight:
0.084199 oz
Tags
IPI052NE7N3G, IPI052, IPI05, IPI0, IPI
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 75V 80A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 75V 80A TO262-3
***ronik
N-CH 75V 80A 5mOhm TO262-3 RoHSconf
Part # Mfg. Description Stock Price
IPI052NE7N3 G
DISTI # IPI052NE7N3G-ND		Infineon Technologies AGMOSFET N-CH 75V 80A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    IPI052NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant    		396
    • 1000:$0.8400
    • 500:$0.8800
    • 100:$0.9200
    • 25:$0.9600
    • 1:$1.0300
    IPI052NE7N3 G
    DISTI # 726-IPI052NE7N3G    		Infineon Technologies AGMOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3
    RoHS: Compliant    		0
      Image Part # Description
      IPI052NE7N3 G

      Mfr.#: IPI052NE7N3 G

      OMO.#: OMO-IPI052NE7N3-G

      		 MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3
      IPI052NE7N3

      Mfr.#: IPI052NE7N3

      OMO.#: OMO-IPI052NE7N3-1190

      		 New and Original
      IPI052NE7N3G

      Mfr.#: IPI052NE7N3G

      OMO.#: OMO-IPI052NE7N3G-1190

      		 Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      IPI052NE7N3G,052NE7N,

      Mfr.#: IPI052NE7N3G,052NE7N,

      OMO.#: OMO-IPI052NE7N3G-052NE7N--1190

      		 New and Original
      IPI052NE7N3 G

      Mfr.#: IPI052NE7N3 G

      OMO.#: OMO-IPI052NE7N3-G-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET N-Ch 75V 80A I2PAK-3 OptiMOS 3
      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of IPI052NE7N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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